The InAsSb single crystals with a cutoff wavelength of 11μm were succesfully grown on InAs substrates by melt epitaxy. Melt epitaxy differs from the normal crystal growth method such as liquid phase epitaxy(LPE), molecular beam epitaxy(MBE) and metalorganic vapor deposition(MOCVD). Infrared Fourier spectrum measurement confirms that the cutoff wavelenth of InAsSb materials is longer than 10μm. X ray diffraction spectrum reveals that InAsSb epilayers have fairly perfect crystal orientation structure, and have the same crystal orientation as that for the InAs substrates, i.e.,<100>ientation. Hall measurements show that the electron mobility is 4.75×10 4cm 2/Vs and the carrier density is 3.61×10 16 cm -3 at 295K, and the electron mobility is 2.86×10 4cm 2/Vs and the carrier density is 1.50×10 16 cm -3 at 77K. The results show that the material has a potential application for fabricating the photodetectors.