STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 26 >Issue 5 >Page 326 > Article

Journal of Infrared and Millimeter Waves
Vol. 26, Issue 5, 326 (2007)

STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS

[in Chinese]^1、2, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2007, 26(5): 326 Copy Citation Text

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References

[1] White J K,Musca C A,Lee H C,et al.Hydrogenation of ZnS passivation on narrow-band gap HgCdTe[J].Applied Physics Letter,2000,76(17):2448-2450.

[2] Young Ho Kim,Tae Sik Kim,Redfern D A,et al.Characteristics of gradually doped LWIR diodes by hydrogenation[J].Journal of Electronic Material,2000,29(6):859-864.

[3] Boieriu P,Grein C H,Velicu S,et al.Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si[J].Applied Physics Letter,2006,88:062106.

[4] Sitharaman S,Raman R,Durai L,et al.Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers[J].Journal of Crystal Growth,2005,285:318-326.

[5] Chen Y F,Chen W S.Influence of hydrogen passivation on the infrared spectra of Hg0.8Cd0.2Te[J].Applied Physics Letter,1991,59(6):703-705.

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2007, 26(5): 326

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