• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 4, 420 (2017)
LI Bin, CHEN Wei, HUANG Xiao-Feng, CHI Dian-Xin, YAO Ke-Ming, WANG Xi, CHAI Song-Gang, and GAO Xin-Jiang
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.04.008 Cite this Article
    LI Bin, CHEN Wei, HUANG Xiao-Feng, CHI Dian-Xin, YAO Ke-Ming, WANG Xi, CHAI Song-Gang, GAO Xin-Jiang. AInP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 420 Copy Citation Text show less
    References

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    [2] Acerbi F, Frera D A, Tosi A, et al. Fast active quenching circuit for reducing avalanche charge and afterpulsing in InGaAs/InP single-photon avalanche diode[J]. IEEE Journal of Quantum Electronics , 2013, 49( 7):563-569.

    [3] McCarthy A, Ren M, Frera A D. Kilometer-range depth imaging at 1550nm wavelength using an InGaAs/InP single-photon avalanche diode detector[J]. Optics Express, 2013, 21(19):22098-22113.

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    [5] Lee M H, Ha C, Jeong H S. Wavelength-division-multiplexed InGaAs-InP avalanched photodiodes for quantum key distribution[J]. Opt. Commun, 2016, 361:162-167.

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    [7] Tosi A, Calandri N, Sanzaro M. Low-jitter, high detection efficiency InGaAs-InP single-photon avalanche diode[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6):3803406.

    [8] Lee K, Lee B, Yoon S, et al. A Low noise planar-type avalanche photodiode using a single-diffusion process in Geiger-mode operation[J]. Japanese Journal of Applied Physics, 2013, 52:072201.

    [9] Zappa F, Lacaita A, Cova S. Nanosecond single-photon timing with InGaAs/Inp photodiodes[J]. Opt. Lett., 1994, 19(11):846-848.

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    [11] Acerbi F, Tosi A, Zappa F. Dark count rate dependence on bias voltage during gate-off in InGaAs/InP single-photon avalanche diode[J]. IEEE Photonics Technology Letters, 2013, 25(18):1832-1834.

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    [13] Acerbi F, Anti M, Tosi A, et al. Design criteria for InGaAs/InP single-photon avalanche diode[J]. IEEE Photonics J., 2013, 5(2):6800209.

    [14] Jiang X, Itzler M, Donnell K. InP-based single-photon detectors and Geiger-mode APD arrays for quantum communications applications[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(3):3800112.

    LI Bin, CHEN Wei, HUANG Xiao-Feng, CHI Dian-Xin, YAO Ke-Ming, WANG Xi, CHAI Song-Gang, GAO Xin-Jiang. AInP cap layer doping density in InGaAs/InP single-photon avalanche diode[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 420
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