• Microelectronics
  • Vol. 52, Issue 2, 283 (2022)
LIANG Hongyu1、2, WANG Yan2、3, and LI Ruzhang2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210263 Cite this Article
    LIANG Hongyu, WANG Yan, LI Ruzhang. A High Linearity and Ultra-Bandwidth Sample/Hold Circuit[J]. Microelectronics, 2022, 52(2): 283 Copy Citation Text show less
    References

    [2] TRETTER G, FRITSCHE D, KHAFAJI M M, et al. A 55-GHz-bandwidth track-and-hold amplifier in 28-nm low-power CMOS [J]. IEEE Trans Circ & Syst, 2016, 63(3): 229-233.

    [4] LIN Y N, YEH Y C, CHANG H Y. A 55-dB SFDR 16-GS/s track-and-hold amplifier in 018 μm SiGe using differential feedthrough cancellation technique [C]// IEEE MTT-S IMS. San Francisco, CA, USA. 2016: 1-4.

    [5] TANTAWY R, PATEL V J, SMITH D S, et al. Wide-bandwidth, high-linearity, 28-GS/s, 10-bit accurate sample and hold amplifier in 130-nm SiGe BiCMOS [J]. IEEE Trans Circ & Syst, 2019, 66(5): 1758-1768.

    [6] DING H, WANG J Y, CHENG X, et al. An 18-GHz- bandwidth master-slave sample-and-hold amplifier for high-speed communication in 013 μm SiGe BiCMOS [C]// IEEE MTT-S IWS. Chengdu, China. 2018: 1-3.

    [9] LIN Y N, HUANG G L, YEH Y C, et al. Design and analysis of 05-fT bandwidth THAs with resolution enhancement techniques in 018-μm SiGe process [J]. IEEE Access, 2019, 7(3): 33024-33037.

    [10] SHEKHAR S, WALLING J S, ALLSTOT D J. Bandwidth extension techniques for CMOS amplifiers [J]. IEEE J Sol Sta Circ, 2006, 41(11): 2424-2439.

    [11] DING H, WANG J Y, CHENG X, et al. A broadband DC-coupling 16 GS/s sample-and-hold amplifier in 013 μm SiGe BiCMOS process [J]Int J Elec & Commun, 2019, 105(11): 62-70.

    LIANG Hongyu, WANG Yan, LI Ruzhang. A High Linearity and Ultra-Bandwidth Sample/Hold Circuit[J]. Microelectronics, 2022, 52(2): 283
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