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    Journals >Journal of Inorganic Materials >Volume 38 >Issue 10 >Page 1149 > Article
    • Journal of Inorganic Materials
    • Vol. 38, Issue 10, 1149 (2023)
    Oxide Memristors for Brain-inspired Computing
    Xia ZHUGE1, Renxiang ZHU1, Jianmin WANG1, Jingrui WANG1, and Fei ZHUGE2,3,4,5,*
    Author Affiliations
  • 11. School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
  • 22. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 33. Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200031, China
  • 44. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100029, China
  • 55. Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
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    DOI: 10.15541/jim20230066 Cite this Article
    Xia ZHUGE, Renxiang ZHU, Jianmin WANG, Jingrui WANG, Fei ZHUGE. Oxide Memristors for Brain-inspired Computing[J]. Journal of Inorganic Materials, 2023, 38(10): 1149 Copy Citation Text show less
    Pattern classification using a single-layer perceptron based on TiO2-x memristor[74]
    1. Pattern classification using a single-layer perceptron based on TiO2-x memristor[74]
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    Pt/TaOx/TiO2-x/Pt memristor[75]
    2. Pt/TaOx/TiO2-x/Pt memristor[75]
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    Cu/Ta2O5/Pt memristor[108]
    3. Cu/Ta2O5/Pt memristor[108]
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    All-optically controlled memristor based on OD-IGZO/OR-IGZO[34]
    4. All-optically controlled memristor based on OD-IGZO/OR-IGZO[34]
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    ZnO-based all-optically controlled memristor[35]
    5. ZnO-based all-optically controlled memristor[35]
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    Abstract
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    References (144)
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    Xia ZHUGE, Renxiang ZHU, Jianmin WANG, Jingrui WANG, Fei ZHUGE. Oxide Memristors for Brain-inspired Computing[J]. Journal of Inorganic Materials, 2023, 38(10): 1149
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