Yu-Rong CUI, Zhi-Cheng XU, Min HUANG, Jia-Jia XU, Jian-Xin CHEN, Li HE. Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas[J]. Journal of Infrared and Millimeter Waves, 2021, 40(4): 427
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 4, 427 (2021)
Fig. 1. Schematic diagrams of mesa-structured InAs/GaSb superlattice detectors （a） gate-controlled structure device， （b） device without passivation
Fig. 2. Response spectrum of device at liquid-nitrogen temperature
Fig. 3. Current-voltage curves of gate-controlled devices
Fig. 4. The transfer characteristic curves of the gate-controlled devices at -0.05 V bias
Fig. 5. Schematic diagrams of sidewall under （a） electron accumulation and （ b） hole accumulation at surface Note：The red areas indicate high electric field regions
Fig. 6. Sb 3d5/2 XPS spectra of sample 3 and sample 4
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Table 1. List of four InAs/GaSb type-II superlattice detector samples under different fabrication processes
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