Goos-Hnchen effect which occurs on the surface of bilayer composed of electric-negative-material (ENM) slab and magnetic-negative-material (MNM) slab is analyzed by using the reflective-phase method and the Gaussian-beam peak-shift criterion. And by using the transfer matrix, it is found that the directions of Goos-Hnchen displacement are different between the situation when the beams reflect from the ENM and the situation that happen on MNM. It also shows that the Goos-Hnchen displacement of such bilayer can be controlled expediently by adjusting the thickness of one layer as the indices of ENM slab are opposite to those of MNM slab.