[2] Feldman D W, James H. Parker, et al, Phys. Rev., 1968, 170: 698.
[3] Balkanski M, Wallis R F, Haro E. Phys. Rev. B, 1983, 28: 1928.
[4] Mishra P, Jain K P. Phys. Rev. B, 1992, 45: 6587.
[5] Verma Prabhat, Abbi S C, Jain K P. Phys. Rev. B, 1995, 51: 16660.
[6] Anand Suruchi, Verma Prabhat, Jain K P, et al. Physica, B, 1996, 226: 331.
[7] Balkanski M, Wallis R F, Haro E. Phys. Rev. B, 1983, 28: 1928.
[9] Goldberg Yu, Levinshtein M E, Rumyantsev S L. Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe, Eds. Levinshtein M E, Rumyantsev S L, Shur M S. New York: John Wiley & Sons, Inc., 2001. 93.
[10] Mikhael Bechelany, Arnaud Brioude, David Cornu, et al. Adv. Funct. Mater., 2007, 17: 939.
[11] Harris G L. Density of SiC, in Properties of Silicon Carbide. Ed. Harris, G.L., EMIS Datareviews Series, N13, 1995b. 3.
