[1] Craciun V,Boyd I W. Microstructure of oxidized layers formed by the low-temperature ultraviolet-assisted dry oxidation of strained SiGe layers on Si [J].J. APPL. Phys.,1994,75: 1972-1975.
[2] Hellberg P E,Zhang S L,Heurle F M,et al. Oxidation of silicon-germanium alloys [J].J. Appl. Phys.,1997,82:5779-5787.
[3] Bongiorno A,Pasquarello A,Hybertsen M S,et al. Transition structure at the Si-SiO2 interface [J].Phys. Rev.Lett.,2003,90: 186101-1-186101-4.
[4] Tetelin C,Wallart X,Nys J P,et al. Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers [J].J. of Appl. Phys.,1998,83: 2842-2846.
[5] Madsen J M,Cui Zhenjiang,Takoudis C G. Low temperature oxidation of SiGe in ozone: ultrathin oxides [J].J.of Appl. Phys.,2000,87: 2046-2051.
[6] Zhang Ping,Xue Qikun,Wang Yupeng. Spin-dependent transport through an interacting quantum dot [J].Phys.Rev. Lett.,2002,89: 286803-1-286803-4.
[7] Huang W,Cai S. Kinetics and mechanism of nanostructure in oxidation of SiGe alloys [J].Chin. Phys. Lett.,2002,19: 1657-1660.
[8] Huang W,et al. Effect of the transient response in SiGe parallelizing PN junction [J].Mater. Sci. Technol.,1999,15: 383-389.
[9] Huang W,et al. Quantum confinement analysis of nanostructures in oxidation of SiGe alloys [J].Chinese Physics,2004,13: 1163.
