Electrical Aging Test and Lifetime Analysis of Whispering-Gallery-Mode Micro-Cavity Lasers

Yingrun Fan; Jinlong Xiao; Yuede Yang; Youzeng Hao; Yongtao Huang; Yongzhen Huang

doi:10.3788/CJL202249.0601001

[1] Waters R G. Diode laser degradation mechanisms: a review[J]. Progress in Quantum Electronics, 15, 153-174(1991).

[2] Souto J, Pura J L, Jiménez J. Microscopic degradation and failure processes in high-power diode lasers[C], 13-14(2019).

[3] Lu G G, Lai G X, Yao B. Evaluation and failure mechanism of high power semiconductor laser packaging[C], 1671-1674(2018).

[4] Sun T Y, Xia M J, Qiao L. Research progress of failure mechanism and detection analysis of semiconductor laser[J]. Laser & Optoelectronics Progress, 58, 1900003(2021).

[5] Chen L H, Yang G W, Liu Y X. Development of semiconductor lasers[J]. Chinese Journal of Lasers, 47, 0500001(2020).

[6] Lu G G, Xie S F, Hao M M et al. High power diode lasers reliability experiment[J]. Proceedings of SPIE, 9042, 90421H(2013).

[7] McCall S L, Levi A F J, Slusher R E et al. Whispering-gallery mode microdisk lasers[J]. Applied Physics Letters, 60, 289-291(1992).

[8] Yao Z S, Wu K Y, Tan B X et al. Integrated silicon photonic microresonators: emerging technologies[J]. IEEE Journal of Selected Topics in Quantum Electronics, 24, 1-24(2018).

[9] Liao M L, Huang Y Z, Weng H Z et al. Narrow-linewidth microwave generation by an optoelectronic oscillator with a directly modulated microsquare laser[J]. Optics Letters, 42, 4251-4254(2017).

[10] Han J H, Park S W. Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Pérot laser diode[J]. IEEE Transactions on Device and Materials Reliability, 5, 683-687(2005).

[11] Huang J S. Reliability-extrapolation methodology of semiconductor laser diodes: is a quick life test feasible？[J]. IEEE Transactions on Device and Materials Reliability, 6, 46-51(2006).

[12] Liu Q K, Kong J X, Zhu L N et al. Failure mode analysis of high-power laser diodes by electroluminescence[J]. Chinese Journal of Luminescence, 39, 180-187(2018).

[13] Yuan Q H, Jing H Q, Zhong L et al. High-power and high-reliability 9XX-nm laser diode[J]. Chinese Journal of Lasers, 47, 0401006(2020).

[14] Lu G G, Tao G T, Yao S et al. Accelerated aging of 808 nm high-power semiconductor laser diodes[J]. Semiconductor Optoelectronics, 26, 97-99(2005).

[15] Lin J D, Huang Y Z, Yang Y D et al. Optical bistability in GaInAsP/InP coupled-circular resonator microlasers[J]. Optics Letters, 36, 3515-3517(2011).

[16] Ueda O. Degradation of III-V opto-electronic devices[J]. Journal of the Electrochemical Society, 135, 11C-22C(1988).

[17] Lü X M, Zou L X, Lin J D et al. Unidirectional-emission single-mode AlGaInAs-InP microcylinder lasers[J]. IEEE Photonics Technology Letters, 24, 963-965(2012).