• Laser & Optoelectronics Progress
  • Vol. 56, Issue 13, 131402 (2019)
Yu Tang1、2, Chunfang Cao1, Xuyi Zhao1, jin Yang3, jinyou Li3, Qian Gong1、2、*, and Hailong Wang3、**
Author Affiliations
  • 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 3 Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
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    DOI: 10.3788/LOP56.131402 Cite this Article Set citation alerts
    Yu Tang, Chunfang Cao, Xuyi Zhao, jin Yang, jinyou Li, Qian Gong, Hailong Wang. Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(13): 131402 Copy Citation Text show less

    Abstract

    In this study, we investigate the laser spectra of the InGaAs/GaAs/InGaP quantum well lasers. Single-mode operation characteristics can be observed in the Fabry-Perot (FP) cavity laser, which exist in a large operating current range (36-68 mA). Mode-hop free wavelength tuning can be observed at a current of 14 mA. The maximum side-mode suppression ratio (SMSR) under single-mode operation of the laser is 29.8 dB at 20 ℃ with an injection current of 62 mA, while SMSR values are generally greater than 20 dB under other injection currents. Furthermore, the maximum output power (single side) of the laser under single-mode operation reaches 12.5 mW. Accordingly, the aforementioned single-mode operation characteristics can be observed for the FP cavity lasers fabricated with similar structures and materials in devices exhibiting different strip widths and cavity lengths. This unique feature results in considerable application potential in applications requiring a single-frequency laser source.
    Yu Tang, Chunfang Cao, Xuyi Zhao, jin Yang, jinyou Li, Qian Gong, Hailong Wang. Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(13): 131402
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