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Journals >Chinese Optics Letters >Volume 16 >Issue 1 >Page 011404 > Article

Chinese Optics Letters
Vol. 16, Issue 1, 011404 (2018)

Stress damage process of silicon wafer under millisecond laser irradiation

Zhichao Jia¹, Tingzhong Zhang², Huazhong Zhu¹, Zewen Li¹, Zhonghua Shen¹, Jian Lu¹, and Xiaowu Ni^1、*

Author Affiliations

¹School of Science, Nanjing University of Science & Technology, Nanjing 210094, China

²Institute of Mechanical and Electrical Engineering, Zhoukou Normal University, Zhoukou 466000, China

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DOI: 10.3788/COL201816.011404 Cite this Article Set citation alerts

Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404 Copy Citation Text

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References

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[1] Liping Peng, Yuan’an Zhao, Xiaofeng Liu, Yonggang Liu, Zhaoliang Cao, Meiping Zhu, Jianda Shao, Ruijin Hong, Chunxian Tao, Dawei Zhang. High-repetition-rate laser-induced damage of indium tin oxide films and polyimide films at a 1064 nm wavelength. Optical Materials Express, 9, 911(2019).

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Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404

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