Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404
- Chinese Optics Letters
- Vol. 16, Issue 1, 011404 (2018)
Fig. 1. Experimental setup for testing damage.
Fig. 2. Real-time images induced by different laser energy densities for (a) 19 and (b) 23 J / cm 2
Fig. 3. (a)–(d) Real-time images at different times. The laser energy density is 28 J / cm 2
Fig. 4. Simulation model of a silicon wafer under laser irradiation.
Fig. 5. (Color online) (a) Temperature of spot center and (b) von Mises stresses along the X axis at 0.7, 1, 1.1, and 1.3 ms, respectively.
Fig. 6. Images just before fracture. The experiment is the same as that of Fig. 3 .
Fig. 7. (Color online) (a) Concentric circle and (b) shear stresses along it at 1.5 ms. S1, S2, and S3 represent the shear stress along (111)[110], (111)[101], and (111)[011], respectively.
Fig. 8. (a) Typical ablation morphology induced by a millisecond laser and (b) a nanosecond laser.
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20