[1] Sommer A H. Brief history of photoemissive materials. Proc. SPIE, 1993, 2022:2～17
[2] Liu Y Z, Moll J L, Spicer W E. Quantum yield of GaAs semitransparent photocathode. Appl. Phys. Lett., 1970, 17(2):60～62
[3] Allen G A. The performance of negative electron affinity photocathodes. J. Phys. (D): Appl. Phys., 1971, 4(1～6):308～317
[4] Antypas G A, James L W, Uebbing J J. Operation of Ⅲ-Ⅴ semiconductor photocathodes in the semitransparent mode. J. Appl. Phys., 1970, 41(7):2888～2894
[5] Spicer W E, Herrera-Gбmez A. Modern theory and application of photocathodes. Proc. SPIE, 1993, 2022:18～33
[6] Yang B, Xu Y L. Caculated photoelectron spectra of NEA photocathodes. J. Phys. (D): Appl. Phys., 1990, 23(4):455～457
[7] André J P, Guittard P, Hallais J et al.. GaAs photocathodes for low light level imaging. J. Crystal. Growth, 1981, 55(1):235～245
[12] James L W. Calculation of the minority-carrier confinement properties of semiconductor heterojunctions (applied to transmission-mode photocathode). J. Appl. Phys., 1974, 45(3):1326～1335
[13] Kudman I, Seidel T. Absorption edge in degenerate p-type GaAs. J. Appl. Phys., 1962, 33(3):771～773
[14] Casey H C, Sell Jr D D, Wecht K W. Concentration dependence of the absorption cofficient for n- and p-type GaAs between 1.3 and 1.6 eV. J. Appl. Phys., 1975, 46(1):250～257
