• Photonics Research
  • Vol. 9, Issue 6, 909 (2021)
Qiaorui Gong1、2, Chengchun Zhao1、2、*, Yilun Yang1、2, Qiannan Fang1, Shanming Li1, Min Xu1, and Yin Hang1、2、3
Author Affiliations
  • 1Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of High-Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3e-mail: yhang@siom.ac.cn
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    DOI: 10.1364/PRJ.418395 Cite this Article Set citation alerts
    Qiaorui Gong, Chengchun Zhao, Yilun Yang, Qiannan Fang, Shanming Li, Min Xu, Yin Hang. Theoretical study on residual infrared absorption of Ti:sapphire laser crystals[J]. Photonics Research, 2021, 9(6): 909 Copy Citation Text show less
    (a) Supercell structure of Al2O3. (b) Four kinds of Ti3+−Ti3+ ion pair models. (c) 3Ti4+−VAl3− model. (d)–(f) Three kinds of Ti3+−3Ti4+−VAl3− models.
    Fig. 1. (a) Supercell structure of Al2O3. (b) Four kinds of Ti3+Ti3+ ion pair models. (c) 3Ti4+VAl3 model. (d)–(f) Three kinds of Ti3+3Ti4+VAl3 models.
    Experimental absorption spectrum of Ti:sapphire sample with a doping concentration less than 0.16% (mass fraction) (on the left) and the simulated absorption spectrum of substitutional Ti-doped model with a theoretical doping concentration more than 3.6% (mass fraction) (on the right). There is a step at 860 nm on the experimental absorption spectrum, which is caused by the test system. The calculated PDOS distribution of Ti_3d is inserted into the simulated absorption spectrum.
    Fig. 2. Experimental absorption spectrum of Ti:sapphire sample with a doping concentration less than 0.16% (mass fraction) (on the left) and the simulated absorption spectrum of substitutional Ti-doped model with a theoretical doping concentration more than 3.6% (mass fraction) (on the right). There is a step at 860 nm on the experimental absorption spectrum, which is caused by the test system. The calculated PDOS distribution of Ti_3d is inserted into the simulated absorption spectrum.
    Band structure (on the left) and polarized absorption spectrum of line-contact Ti3+−Ti3+ ion pair model (on the right).
    Fig. 3. Band structure (on the left) and polarized absorption spectrum of line-contact Ti3+Ti3+ ion pair model (on the right).
    The DOS of the supercell Ti2Al46O72, the LDOS of Al, O and Ti, and the PDOS of s, p, d electrons of line-contact Ti3+−Ti3+ ion pair model.
    Fig. 4. The DOS of the supercell Ti2Al46O72, the LDOS of Al, O and Ti, and the PDOS of s, p, d electrons of line-contact Ti3+Ti3+ ion pair model.
    Optimized charge distributions of HOMO, LUMO, and LUMO+i (i=1,2,3,4) of line-contact Ti3+−Ti3+ ion pair model. HOMO is the highest occupied molecule orbital. LUMO is the lowest unoccupied molecule orbital, while LUMO+1 means the first adjacent orbital above it, and so on for LUMO+i in a similar fashion. The blue-shaded area is the probability distribution of electrons in space, and the green spheres covered by it represent Ti ions.
    Fig. 5. Optimized charge distributions of HOMO, LUMO, and LUMO+i(i=1,2,3,4) of line-contact Ti3+Ti3+ ion pair model. HOMO is the highest occupied molecule orbital. LUMO is the lowest unoccupied molecule orbital, while LUMO+1 means the first adjacent orbital above it, and so on for LUMO+i in a similar fashion. The blue-shaded area is the probability distribution of electrons in space, and the green spheres covered by it represent Ti ions.
    Band structure, Ti_3d_PDOS, and polarized absorption spectrum of 3Ti4+−VAl3− model.
    Fig. 6. Band structure, Ti_3d_PDOS, and polarized absorption spectrum of 3Ti4+VAl3 model.
    Band structure, Ti_3d_PDOS, and polarized absorption spectrum of face-contact Ti3+−Ti4+ ion pair model.
    Fig. 7. Band structure, Ti_3d_PDOS, and polarized absorption spectrum of face-contact Ti3+Ti4+ ion pair model.
    Optimized charge distributions of HOMO, LUMO, and LUMO+j (j=1, 2, 3, 10) of face-contact Ti3+−Ti4+ ion pair model (see caption of Fig. 5 for details).
    Fig. 8. Optimized charge distributions of HOMO, LUMO, and LUMO+j (j=1, 2, 3, 10) of face-contact Ti3+Ti4+ ion pair model (see caption of Fig. 5 for details).
    Ti3+Ti3+Distance (Optimized)Magnetic CouplingBand GapTotal Energy
    Face-contact2.448 ÅAntiferromagnetic0.659 eV−37453.6827 eV
    Line-contact2.563 ÅAntiferromagnetic0.770 eV−37453.8375 eV
    Point-contact 23.034 ÅFerrimagnetic0.543 eV−37453.1967 eV
    Point-contact 13.471 ÅFerromagnetic0.299 eV−37453.0835 eV
    Table 1. Main Parameters and Calculation Results for Four Kinds of Ti3+Ti3+ Ion Pair Models
    Ti3+3Ti4+VAl3Band GapTotal Energy
    Face-contact0.610 eV−40487.4271 eV
    Line-contact0.436 eV−40487.5264 eV
    Point-contact0.218 eV−40487.3425 eV
    Table 2. Band Gap and Total Energy for Three Kinds of Ti3+Ti4+ Ion Pair Models
    Qiaorui Gong, Chengchun Zhao, Yilun Yang, Qiannan Fang, Shanming Li, Min Xu, Yin Hang. Theoretical study on residual infrared absorption of Ti:sapphire laser crystals[J]. Photonics Research, 2021, 9(6): 909
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