1.3μm InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN ON In0.2 Ga0.8 As-GaAs COMBINED STRAIN-BUFFER LAYER

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 5 >Page 324 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 5, 324 (2005)

1.3μm InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN ON In0.2 Ga0.8 As-GaAs COMBINED STRAIN-BUFFER LAYER

[in Chinese]^1、2, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 1.3μm InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN ON In0.2 Ga0.8 As-GaAs COMBINED STRAIN-BUFFER LAYER[J]. Journal of Infrared and Millimeter Waves, 2005, 24(5): 324 Copy Citation Text

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References

[3] MENG Xian-Quan, XU Bo, JIN Peng, et al. Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm [ J ]. J.Crystal Growth, 2002, 243: 432-438.

[4] Chu L, Arzberger M, Bohom G, et al. Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots [J]. J. Appl. Phys., 1999, 85(4): 2355-2362.

[5] Chung T, Walter W, Holonyak Jr N. Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot A1GaAs-GaAs-InGaAs-InAs heterostructure laser [ J ]. Appl. Phys. Lett., 2001,79(27): 4500-4502.

[6] LIU Hui-Yun, Hopkinson M, Tuning the structural and optical properties of 1.3 - μm InAs/GaAs quantum dots by a combined InA1As and GaAs strained buffer layer [ J ]. Appl. Phys. Lett. , 2003, 82(21 ): 3644-3646.

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