• Chinese Journal of Quantum Electronics
  • Vol. 18, Issue 6, 535 (2001)
[in Chinese]
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  • [in Chinese]
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    [in Chinese]. Lateral Distribution of Injection Current in Stripe Geometry Semiconductor Lasers[J]. Chinese Journal of Quantum Electronics, 2001, 18(6): 535 Copy Citation Text show less
    References

    [2] R.Lang. Lateral transerse mode instability and its stabilization in stripe geometry injection lasers [J]. IEEE J. Quantum Electron, 1979, QE-15:718

    [3] W Von Koppen fel, Stallman F. Praixs der Konformen Abbidung [M]. 1959. 176~344

    [5] Wolf H D, Metlle K, Zsdaauer K H. High performance 880 nm (GaAl)Al/GaAs oxide stripe lasers with very low degradation rates at temperatures up to 120 Japan: J. AppL Phys., 1981, 20(9): L693~L696

    [in Chinese]. Lateral Distribution of Injection Current in Stripe Geometry Semiconductor Lasers[J]. Chinese Journal of Quantum Electronics, 2001, 18(6): 535
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