• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 5, 613 (2003)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-efficiency Two-phase CMOS High Voltage Generator[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 613 Copy Citation Text show less

    Abstract

    The power efficiency of MOS charge pumping circuit is becoming one of the most important issues as the power supply decreasing continuously and the area of a chip. Owing to the threshold voltage losing of the transfer MOS, power-efficiency of traditional Dickson charge pumping is low. In this paper, a high-efficiency two-phase charge pumping circuit bases on the four-phase are invented, which solves the contradiction between the power-efficiency and the chip area consequently.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-efficiency Two-phase CMOS High Voltage Generator[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 613
    Download Citation