Researching | Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector

Journals >Journal of Infrared and Millimeter Waves >Volume 42 >Issue 3 >Page 306 > Article

Journal of Infrared and Millimeter Waves
Vol. 42, Issue 3, 306 (2023)

Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector

Ze-Zhong CHEN¹, Yong-Fei DUAN¹, Hong-Yu LIN³, Zhen-Yu ZHANG¹, Hao XIE², Yan SUN², Shu-Hong HU^2、*, and Ning DAI^2、4、**

Author Affiliations

¹School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China

²Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, China

³Zhejiang Lab, Hangzhou311100, China

⁴Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

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DOI: 10.11972/j.issn.1001-9014.2023.03.004 Cite this Article

Ze-Zhong CHEN, Yong-Fei DUAN, Hong-Yu LIN, Zhen-Yu ZHANG, Hao XIE, Yan SUN, Shu-Hong HU, Ning DAI. Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 306 Copy Citation Text

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References

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[8] X Du, B T Marozas, G R Savich et al. Defect-related surface currents in InAs-based nBn infrared detectors. Journal of Applied Physics, 123, 214504-1-214504-5(2018).

[9] G R Deng, W Y Yang, P Zhao et al. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier. Applied Physics Letters, 116, 031104(2020).

[10] G R Deng, W Y Yang, X X Gong et al. High-performance uncooled InAsSb-based pCBn mid-infrared photodetectors. Infrared Physics & Technology, 105, 103260(2020).

[11] J C Tong, L Tobing, S P Qiu et al. Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector. Applied Physics Letters, 113, 011110.1-011110.5(2018).

[12] J C Tong, L Tobing, L Qian et al. InAs0.9Sb0.1-based hetero p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature. Applied Physics Letters, 53, 13010-13017(2018).

[13] F Suo, J C Tong, L Qian et al. Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode. Journal of Physics D-Applied Physics, 51, 275102(2018).

[14] D Z Ting, A Soibel, A Khoshakhlagh et al. Mid-wavelength high operating temperature barrier infrared detector and focal plane array. Applied Physics Letters, 113, 021101(2018).

[15] A Soibel, D Z Ting, S B Rafol et al. Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density. Applied Physics Letters, 114, 161103(2019).

[16] H Y Lin, Z J Zhou, H Xie et al. High-performance room-temperature extended-wavelength InAs-based middle-wavelength infrared photodetector. Physica Status Solidi (A)- Applications and Materials Science, 218, 2100281(2021).

[17] A Krier, W Suleiman et al. Uncooled photodetectors for the 3–5 μm spectral range based on III–V heterojunctions. Applied Physics Letters, 89, 083512(2006).

[18] X Marcadet, A Rakovska, I Prevot et al. MBE growth of room-temperature InAsSb mid-infrared detectors. Journal of Crystal Growth, 227, 609-613(2001).

[19] S Saha, D T Cassidy, D A Thompson. Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates. Journal of Applied Physic, 113, 49-52(2013).

[20] Teledyne Judson. J12 series InAs detector. http://www.teledynejudson.com/products/indium-arsenide-detectors)

[21] P Hamamatsu. 10090-01, InAs Detector. https://www.hamamatsu.com/eu/en/product/type/P10090-01/index.html)

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Ze-Zhong CHEN, Yong-Fei DUAN, Hong-Yu LIN, Zhen-Yu ZHANG, Hao XIE, Yan SUN, Shu-Hong HU, Ning DAI. Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 306

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