• Acta Optica Sinica
  • Vol. 26, Issue 5, 773 (2006)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation of γ-LiAlO2 Layer on (11-20)Sapphire by Vapor Transport EquilibrationLiu Shiliang[J]. Acta Optica Sinica, 2006, 26(5): 773 Copy Citation Text show less
    References

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    [3] Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt. Spontaneous polarization and piezoelectric constants of Ⅲ-Ⅴnitrides[J]. Phys. Rev. B, 1997, 56(16): R10024~R10027

    [4] Jin Seo Im, H. Kollmer, J. Off et al.. Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells[J]. Phys. Rev. B, 1998, 57(16): R9435~R9438

    [5] P. Waltereit, O. Brandt, A. Trampert et al.. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes[J]. Nature, 2000, 406(6798): 865~868

    [6] Xu Ke, Xu Jun, Deng Penzhen et al.. γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy[J]. J. Crystal Growth, 1998, 193(1~2): 127~132

    [7] P. Waltereit, O. Brandt, M. Ramsteiner et al.. Growth of M-GaN(1-100) on γ-LiAlO2(100)[J]. J. Crystal Growth, 2000, 218(2~4): 143~147

    [8] Yue Jun Sun, Oliver Brandt, Uwe Jahn et al.. Impact of nucleation conditions on the structural and optical properties of M-GaN(1-100) grown on γ-LiAlO2(100)[J]. J. Appl. Phys., 2002, 92(10): 5714~5719

    [9] R. R. Vanfleet, J. A. Simmons, H. P. Maruska et al.. Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2[J]. Appl. Phys. Lett., 2003, 83(6): 1139~1141

    [10] Yue Jun Sun, Oliver Brandt, Klaus H. Ploog. Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity[J]. J. Vacuum Science and Technology B, 2003, 21(4): 1350~1356

    [11] Pranob Misra, Yue Jun Sun, Oliver Brandt et al.. In-plane polarization anisotropy polarization rotation for M-plane GaN films on LiAlO2[J]. Appl. Phys. Lett., 2003, 83(21): 4327~4329

    [12] B. Cockayne, B. Lent. The Czochralski growth of single crystal lithium aluminate, LiAlO2[J]. J. Crystal Growth, 1981, 54(3): 546~550

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    [15] Li Shizhi, Yang Weiqiao, Zhou Shengming et al.. The Growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphires[J]. Science in China Ser. E, 2005, 48(1): 116~120

    [16] Shengming Zhou, Ju Xu, Shuzhi Li et al.. Highly α-axis oriented γ-LiAlO2 layer on α-plane sapphire fabricated by vapor transport equilibration[J]. Phys. Stat. Sol. (A), 2004, 201(7): R35~R37

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation of γ-LiAlO2 Layer on (11-20)Sapphire by Vapor Transport EquilibrationLiu Shiliang[J]. Acta Optica Sinica, 2006, 26(5): 773
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