• Journal of Infrared and Millimeter Waves
  • Vol. 21, Issue 4, 285 (2002)
[in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, and [in Chinese]3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. TEMPERATURE DEPENDENCE OF OPTICAL GAIN IN InGaAs QUANTUM DOTS LASER[J]. Journal of Infrared and Millimeter Waves, 2002, 21(4): 285 Copy Citation Text show less
    References

    [1] Ledentsov Nikolai N, Grundmann M, Heinrichsdorff F.,et al. Quantum-dot heterostructure lasers. IEEE J. Sel. Quantum Electron., 2000,6(3):439

    [2] Gyoungwon Park, Shchekin Oleg B, Huffaer Diana L, et al. Low-threshold oxide-confined 1.3μm quantum dot laser. IEEE Photon. Technol. Lett., 2000,13(3):230

    [3] Gyoungwon Park, Shchekin Oleg B, Sebastion Csutak, et al. Room-temperature continuous-wave operation of a single-layere 1.3μm quantum dot laser. Appl. Phys. Lett, 1999, 75(21):3267

    [4] Herrmann E, Smowton P M, Summers H D, et al. Modal gain and internal mode loss of a quantum dot laser. Appl. Lett. Phys., 2000,77(2):163

    [5] Oster A, Erbert G, Wenzel H. Gain spectra measurements by a variable stripe length method with current injection. Electron. Lett. 1997,33(10):864

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. TEMPERATURE DEPENDENCE OF OPTICAL GAIN IN InGaAs QUANTUM DOTS LASER[J]. Journal of Infrared and Millimeter Waves, 2002, 21(4): 285
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