High power single-higher-mode VCSEL with inverted surface relief

WANG Xia; HAO Yong-Qin; YAN Chang-Ling; WANG Zuo-Bin; WANG Zhi-Wei; XIE Jian-Lai; MA Xiao-Hui; JIANG Hui-Lin

doi:10.11972/j.issn.1001-9014.2018.02.007

Journals >Journal of Infrared and Millimeter Waves >Volume 37 >Issue 2 >Page 168 > Article

Journal of Infrared and Millimeter Waves
Vol. 37, Issue 2, 168 (2018)

High power single-higher-mode VCSEL with inverted surface relief

WANG Xia^1、*, HAO Yong-Qin¹, YAN Chang-Ling¹, WANG Zuo-Bin², WANG Zhi-Wei¹, XIE Jian-Lai¹, MA Xiao-Hui¹, and JIANG Hui-Lin³

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2018.02.007 Cite this Article

WANG Xia, HAO Yong-Qin, YAN Chang-Ling, WANG Zuo-Bin, WANG Zhi-Wei, XIE Jian-Lai, MA Xiao-Hui, JIANG Hui-Lin. High power single-higher-mode VCSEL with inverted surface relief[J]. Journal of Infrared and Millimeter Waves, 2018, 37(2): 168 Copy Citation Text

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Abstract

An inverted surface relief vertical-cavity surface-emitting laser (ISR-VCSEL) with annular light emitting window has been presented and investigated. The most prominent structural feature of the device is that the stable single-higher-order transverse mode emission is supported. The laser emits output power up to 9.8 mW at about six times threshold current with an SMSR close to 30 dB, and it can still keep the output power of 4 mW even at as high ambient temperature as 360 K. The measured far field power intensity shows a Gaussian-shaped beam profile with low divergence.

Keywords

high-temperature inverted surface relief semiconductor laser single-higher-mode vertical-cavity surface-emitting laser (VCSEL)

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