• Journal of Semiconductors
  • Vol. 40, Issue 2, 020301 (2019)
M. A. Rafiq1、3, Chuanbo Li2, and Buwen Cheng3
Author Affiliations
  • 1Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad, 45650, Pakistan
  • 2School of Science, Minzu University of China, Beijing 100081, China
  • 3State Key Laboratory on Integrated optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.1088/1674-4926/40/2/020301 Cite this Article
    M. A. Rafiq, Chuanbo Li, Buwen Cheng. Remembering John Bardeen: inventor of transistor[J]. Journal of Semiconductors, 2019, 40(2): 020301 Copy Citation Text show less
    John Bardeen receiving Physics Nobel prize in 1956. Reprinted from Ref. [3].
    Fig. 1. John Bardeen receiving Physics Nobel prize in 1956. Reprinted from Ref. [3].
    First point contact transistor. Reprinted from Ref. [3].
    Fig. 2. First point contact transistor. Reprinted from Ref. [3].
    Schematic representation of working of point contact transistor. Reprinted from Ref. [4].
    Fig. 3. Schematic representation of working of point contact transistor. Reprinted from Ref. [4].
    M. A. Rafiq, Chuanbo Li, Buwen Cheng. Remembering John Bardeen: inventor of transistor[J]. Journal of Semiconductors, 2019, 40(2): 020301
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