• Opto-Electronic Engineering
  • Vol. 33, Issue 6, 37 (2006)
[in Chinese]1、2, [in Chinese]2, [in Chinese]3, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37 Copy Citation Text show less
    References

    [2] SHAO S Y,FAN Z X,SHAO J D,et al.Evolutions of residual stress and microstructure in ZrO2 thin films deposited at different temperatures and rates[J].Thin solid films,2003,445(1):59-62.

    [4] LEVICHKOVA M,MANKOV V,STARBOV N,et al.Structure and properties of nanosized electron beam deposited zirconia thin films[J].Surface and coating technology,2001,141(1):70-77.

    [5] JONES F.High-rate reactive sputter deposition of zirconium dioxide[J].J.Vac.Sci.Technol,A,1988,6(6):3088-3097.

    [6] YOON Y S,KIM J S,CHOI S H.Structural and electrochemical properties of vanadium oxide thin films grown by d.c.and r.f.reactive sputtering at room temperature[J].Thin Solid Films,2004,460(1-2):41-47.

    [7] Young Wook CHOI,Jeehyun KIM.Reactive sputtering of magnesium oxide thin film for plasma display panel applications[J].Thin Solid Films,2004,460(1-2):295-299.

    [8] HOLGADO J P,GALINDO R E,VEEN A V,et al.Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition[J].Nuclear Instruments and Methods in Physics Research B,2002,194(3):333-345.

    [9] ALVISI M,TOMASI F D,PERRONE M R,et al.Laser damage dependence on structural and optical properties of ion-assisted HfO2 thin films[J].Thin solid films,2001,396 (1-2):44-52.

    [11] GAO P T,MENG L J,SANTOS M P,et al.Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by r.f.reactive sputtering[J].Applied Surface Science,2001,173 (1-2):84-90.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37
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