Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes

HOU Li-li; HAN Qin; LI Bin; WANG Shuai; YE Han

doi:10.3788/gzxb20184705.0523001

[1] ACERBI F, ANTI M, TOSI A, et al. Design criteria for InGaAs/InP single-photon avalanche diode［J］. IEEE Photonics Journal, 2013, 5(2): 6800209.

[2] ITZLER M A, ENTWISTLE M, JIANG X, et al. Geiger-mode APD single-photon cameras for 3D laser radar imaging［C］. IEEE Aerospace Conference, 2014: 1-12.

[3] ITZLER M A, ENTWISTLE M, KRISHNAMACHARI U, et al. SWIR Geiger-mode APD detectors and cameras for 3D imaging［C］. SPIE, 2014: 91140F.

[4] JIANG X, ITZLER M, O’DONNELL K, et al. InP-based single-photon detectors and geiger-mode APD arrays for quantum communications applications［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 21(3): 5-16.

[5] PITTS O J, HISKO M, BENYON W, et al. Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process［J］. Journal of Crystal Growth, 2017, 470: 149-153.

[6] KAO Y C, WOLLEY E D. High-voltage planar p-n junctions［J］. Proceedings of the IEEE, 1967, 55(8): 1409-1414.

[7] TAGUCHI K, TORIKAI T, SUGIMOTO Y, et al. Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 μm wavelength optical communication use［J］. Journal of Lightwave Technology, 1988, 6(11): 1643-1655.

[8] YAGYU E, SUGIHARA K, NISHIOKA T, et al. Planar avalanche photodiode for long-haul single-photon optic fiber communications［J］. Applied Physics Express, 2007, 1(1): 155-162.

[9] BURM J, CHOI J Y, CHO S R, et al. Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication Layers for 10-gb/s applications［J］. IEEE Photonics Technology Letters, 2004, 16(7): 1721-1723.

[10] WEI R, DRIES J C, WANG H, et al. Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes［J］. IEEE Photonics Technology Letters, 2002, 14(7): 977-979.

[11] HYUN K S, KWON Y H, YUN I. Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer［J］. Journal- Korean Physical Society, 2004, 4479(4): L779-L784.

[12] KIM M D, BAEK J M, WOO Y D, et al. Double floating guard-ring-type InP/InGaAs avalanche photodiodes with low-resistance ohmic contacts［J］. Journal- Korean Physical Society, 2007, 50(6): 1925-1928.

[13] TAROF L E, KNIGHT D G, FOX K E, et al. Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery［J］. Applied Physics Letters, 1990, 57(7): 670-672.

[14] TAROF L E, BRUCE R, KNIGHT D G, et al. Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings［J］. IEEE Photonics Technology Letters, 2002, 7(11): 1330-1332.

[15] HARALSON J N, PARKS J W, BRENNAN K F, et al. Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoffavalanche photodiodes［J］. Journal of Lightwave Technology, 2002, 15(11): 2137-2140.

[16] YUN I, HYUN K S. Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication［J］. Microelectronics Journal, 2000, 31(8): 635-639.

[17] ITZLER M A, JIANG X, ENTWISTLE M, et al. Advances in InGaAsP-based avalanche diode single photon detectors［J］. Journal of Modern Optics, 2011, 58(3-4): 174-200.

[18] ZAPPA F, LOVATI P, LACAITA A. Temperature dependence of electron and hole ionization coefficients in InP［C］. IEEE Eighth International Conference on Indium Phosphide and Related Materials, 1996: 628-631.