Fig. 1. (Color online) (a) Magnetization versus magnetic field measured atT = 5 K with magnetic field applied along the out-of-plane direction in Ga_0.94Mn_0.06As_0.79P_0.21. ρxy/ρxx0.4 at 5 K is also plotted for comparison. Inset: Temperature dependence of magnetization measured along the out-of-plane [001] axis atB = 2 mT. (b) Resistivity of S1 (Ga_0.94Mn_0.06As_0.79P_0.21) and (c) that of S2 (Ga_0.94Mn_0.04As_0.79P_0.21) at several temperatures with magnetic field applied along the [001] axis.

Fig. 2. (Color online) Resistivity of Ga_0.94Mn_0.06As_0.79P_0.21 sample with magnetic field applied along the [001] axis. (a) Scaling of resistivity versus 1/T at different magnetic fields. (b) Scaling of resistivity versusT ^−1/2 at different magnetic fields.

Fig. 3. (Color online) (a) Scaling of the resistivity versusT ^−1/2 at different magnetic fields for lower temperatures. The curves are fits of Eq. (3), and (b), (c) and (d) show the field dependence of fitting parameters ρ0,α andT₀. The red curve fits in (c) and in (d) have a decaying exponential form.

Fig. 4. (Color online) (a) Scaling of the resistivity versus 1/T at different magnetic fields at higher temperatures. The curves are fits to Eq. (1). (b) Magnetic field dependence of fitting parametersρ₁ andT₁. (c) Logarithm scale of the magnetoresistance versus magnetic field fitted with a Langevin function.

Table 1. Properties of Ga_1–xMn_xAs_0.79P_0.21 films.