• Microelectronics
  • Vol. 53, Issue 3, 458 (2023)
WANG Xu, LIU Tao, and DENG Minming
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.230145 Cite this Article
    WANG Xu, LIU Tao, DENG Minming. The Design of a Radiation Hardened 16-bit 80-MSPS A/D Converter[J]. Microelectronics, 2023, 53(3): 458 Copy Citation Text show less

    Abstract

    In order to meet the demands of areo-space electronic system for high speed high precision ADC, a radiation hardened 16-bit 80 MSPS ADC was designed. The core of 16 bit ADC was implemented with “3+4+3+3+3+3+3” pipelined structure, and the front dedicated buffer was used to reduce the kickback and improved the whole linearity of ADC. The radiation hardened technologies, such as edgeless MOS device and N+/P+ rings, were also exploited. The ADC was designed with standard 018 μm CMOS process. With the supply voltage of 33 V and 18 V, the clock frequency of 80 MHz and input frequency of 361 MHz, the power dissipation is less than 11 W, SNR is larger than 738 dB, and SFDR is larger than 88 dBFS, respectively. The SNR degrades less than 03 dB and SFDR degrades less than 1 dB after total ionizing dose irradiation of 150 krad(Si).The current increases less than 4 mA under Bi heavy ion irradiation.
    WANG Xu, LIU Tao, DENG Minming. The Design of a Radiation Hardened 16-bit 80-MSPS A/D Converter[J]. Microelectronics, 2023, 53(3): 458
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