• Opto-Electronic Engineering
  • Vol. 35, Issue 10, 58 (2008)
GAI Na*, ZHOU Ya-xun, DAI Shi-xun, XU Tie-feng, and NIE Qiu-hua
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  • [in Chinese]
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    DOI: Cite this Article
    GAI Na, ZHOU Ya-xun, DAI Shi-xun, XU Tie-feng, NIE Qiu-hua. Investigation of Radiation Trapping and Concentration Quenching in Erbium-doped Bismuth-based Glasses[J]. Opto-Electronic Engineering, 2008, 35(10): 58 Copy Citation Text show less

    Abstract

    A serial of Er2O3-doped bismuth-boron-germanium glasses with composition of Bi2O3-B2O3-GeO2-Na2O were prepared by the high-temperature melt-quenching method.And the absorption spectra and fluorescence emission spectra were measured and investigated as a function of erbium ion doping concentration.It is found that there are intense radiation trapping and concentration quenching effect in erbium-doped Bi2O3-B2O3-GeO2-Na2O glasses.With the increase of erbium ion doping concentration,the 1.53 μm fluorescence emission spectrum broadens and the sub-emission peak at 1 560 nm increases,which is analyzed qualitatively with a four-level equivalent model.At the same time,the fluorescence lifetime of 4I13/2 level and the fluorescence intensity at 1.53 μm increase at first,and then decrease with the increase of erbium ion concentration.On the basis of the energy migration model of Dexter theory,the critical distance R0 for concentration quenching happening and the interaction microparameter CEr-Er were determined.The value of CEr-Er in the Er2O3-doped Bi2O3-B2O3-GeO2-Na2O glasses was compared with that in other glass hosts.
    GAI Na, ZHOU Ya-xun, DAI Shi-xun, XU Tie-feng, NIE Qiu-hua. Investigation of Radiation Trapping and Concentration Quenching in Erbium-doped Bismuth-based Glasses[J]. Opto-Electronic Engineering, 2008, 35(10): 58
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