• High Power Laser and Particle Beams
  • Vol. 33, Issue 8, 086002 (2021)
Yaofeng Zhang, Yuan Yin, Lei Cao, and Chunlei Zhang
Author Affiliations
  • College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
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    DOI: 10.11884/HPLPB202133.210134 Cite this Article
    Yaofeng Zhang, Yuan Yin, Lei Cao, Chunlei Zhang. Simulations of ion trap devices based on finite element analysis method[J]. High Power Laser and Particle Beams, 2021, 33(8): 086002 Copy Citation Text show less
    Structure of an ideal Penning trap
    Fig. 1. Structure of an ideal Penning trap
    Geometry model of a Penning trap in ANSYS
    Fig. 2. Geometry model of a Penning trap in ANSYS
    Contour of equal potential for the electric field in the gap of the Penning trap (1/4 of the whole plane)
    Fig. 3. Contour of equal potential for the electric field in the gap of the Penning trap (1/4 of the whole plane)
    Tracking results for an ion moving in an ideal Penning trap (start from x=0.1 cm, y=0 and z=0.2 cm)
    Fig. 4. Tracking results for an ion moving in an ideal Penning trap (start from x=0.1 cm, y=0 and z=0.2 cm)
    The tracking results for an ion moving in the Penning trap, with Helium gas filled in (start from x=0.1 cm, y=0 and z=0.2 cm)
    Fig. 5. The tracking results for an ion moving in the Penning trap, with Helium gas filled in (start from x=0.1 cm, y=0 and z=0.2 cm)
    The way to apply the quadrupole excitation potential on the ring electrodes
    Fig. 6. The way to apply the quadrupole excitation potential on the ring electrodes
    Tracking results for an ion moving in the Penning trap, with helium gas filled in and quadrupole electric potential applied (start from x=0.1 cm, y=0 and z=0.2 cm), here 潘宁装置中充入He气体加四极场激发时离子运动轨迹图()(初始位置x=0.1 cm,y=0,z=0.2 cm)
    Fig. 7. Tracking results for an ion moving in the Penning trap, with helium gas filled in and quadrupole electric potential applied (start from x=0.1 cm, y=0 and z=0.2 cm), here 潘宁装置中充入He气体加四极场激发时离子运动轨迹图( )(初始位置x=0.1 cm,y=0,z=0.2 cm)
    Equal potential distribution when the excitation potential of ±10 V applied on the ring electrodes
    Fig. 8. Equal potential distribution when the excitation potential of ±10 V applied on the ring electrodes
    Relative error between the real distribution of the potential of the gap and the ideal quadruapole distribution, varying with different radii
    Fig. 9. Relative error between the real distribution of the potential of the gap and the ideal quadruapole distribution, varying with different radii
    Diagram of the ring electrodes for an optimized Penning trap
    Fig. 10. Diagram of the ring electrodes for an optimized Penning trap
    Projection of the motion of an ion upon x-y plane, the starting point is x=0.1 cm and y=0 cm
    Fig. 11. Projection of the motion of an ion upon x-y plane, the starting point is x=0.1 cm and y=0 cm
    Yaofeng Zhang, Yuan Yin, Lei Cao, Chunlei Zhang. Simulations of ion trap devices based on finite element analysis method[J]. High Power Laser and Particle Beams, 2021, 33(8): 086002
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