• Microelectronics
  • Vol. 51, Issue 6, 929 (2021)
QIU Sheng1, XIA Shiqin1, DENG Li1, and ZHANG Peijian2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.210213 Cite this Article
    QIU Sheng, XIA Shiqin, DENG Li, ZHANG Peijian. Study on 1/f Noise Characteristics in DPSA Bipolar Transistors[J]. Microelectronics, 2021, 51(6): 929 Copy Citation Text show less
    References

    [1] VANDAMME L K J, HOOGE F N. What do we certainly know about 1/f noise in MOSTs? [J]. IEEE Trans Elec Dev, 2008, 55(11): 3070-3085.

    [2] FLEETWOOD D M. 1/f noise and defects in microelectronic materials and devices [J]. IEEE Trans Nucl Sci, 2015, 62 (4): 1462-1486.

    [3] DEEN M J, PASCAL F. Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors [J]. IEEE Proc Circ Dev Syst, 2004, 151(2): 125-137.

    [4] HOQUE M M, BUTLER Z C, LAN D, et al. Effect of interfacial oxide thickness on 1/f noise in polysilicon emitter BJTs [J]. IEEE Trans Elec Dev, 2004, 51 (9): 1504-1513.

    [5] ANGELIS C T, DIMITRIADIS C A, FARMAKIS F V, et al. Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors [J]. J Appl Phys, 1999, 86(12): 7083-7086.

    [6] CARROLL M S, NEUGROSCHEL A, SAH C T. Degradation of silicon bipolar junction transistors at high forward current densities [J]. IEEE Trans Elec Dev, 1997, 44(1): 110-117.

    [7] ZHU K F, ZHANG P J, CHEN W S. Temperature dependent reliability of polysilicon emitter bipolar transistors under high current stress [J]. IEEE Trans Dev Mater Reliab, 2020, 20(3): 548-554.

    [8] SANDEN M, MARINOV O, DEEN M J. Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors [J]. IEEE Elec Dev Lett, 2001, 22(5): 242-244.

    QIU Sheng, XIA Shiqin, DENG Li, ZHANG Peijian. Study on 1/f Noise Characteristics in DPSA Bipolar Transistors[J]. Microelectronics, 2021, 51(6): 929
    Download Citation