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Journals >Acta Physica Sinica >Volume 68 >Issue 19 >Page 196103-1 > Article

Acta Physica Sinica
Vol. 68, Issue 19, 196103-1 (2019)

Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells

Hong-Ying Pan and Zhi-Jue Quan^*

DOI: 10.7498/aps.68.20191042 Cite this Article

Hong-Ying Pan, Zhi-Jue Quan. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells[J]. Acta Physica Sinica, 2019, 68(19): 196103-1 Copy Citation Text

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Hong-Ying Pan, Zhi-Jue Quan. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells[J]. Acta Physica Sinica, 2019, 68(19): 196103-1

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