Fig. 1. Schematic of In_xGa_1–xN p-i-n homojunction solar cells. y is the position measured from the p-layer surface and y = 0 represents the p-layer surface. In_xGa_1–xN p-i-n同质结太阳电池结构示意图y是距离p层表面的位置, y = 0代表p层表面

Fig. 2. (a) Conversion efficiencies and (b) collection efficiencies with various N_A⁺ for In_0.2Ga_0.8N, In_0.4Ga_0.6N, In_0.6Ga_0.4N p-i-n homojunction solar cells, respectively. In_0.2Ga_0.8N, In_0.4Ga_0.6N和In_0.6Ga_0.4N p-i-n同质结电池中, (a)转换效率和(b)收集效率随p层空穴浓度N_A⁺的关系

Fig. 3. Under AM1.5 illumination and zero bias, electric-field of (a) In_0.2Ga_0.8N, (c) In_0.4Ga_0.6N and (e) In_0.6Ga_0.4N p-i-n homojunction solar cells with various hole concentration (N_A⁺); I-V curves of (b) In_0.2Ga_0.8N, (d) In_0.4Ga_0.6N and (f) In_0.6Ga_0.4N p-i-n homojunction solar cells with various hole concentration (N_A⁺), respectively. (a) In_0.2Ga_0.8N, (c) In_0.4Ga_0.6N和(e) In_0.6Ga_0.4N p-i-n同质结在零偏压及光照下, 不同空穴浓度(N_A⁺)下的内建电场; (b) In_0.2Ga_0.8N, (d) In_0.4Ga_0.6N和(f) In_0.6Ga_0.4N p-i-n同质结在不同空穴浓度(N_A⁺)下的I-V曲线

Fig. 4. (a) Conversion efficiency and (b) collection efficiency versus p-layer thickness for In_0.2Ga_0.8N, In_0.4Ga_0.6N and In_0.6Ga_0.4N p-i-n homojunction solar cells, respectively. In_0.2Ga_0.8N, In_0.4Ga_0.6N和In_0.6Ga_0.4N p-i-n同质结电池中, (a)转换效率和(b)收集效率随p层厚度的变化

Fig. 5. (a) Short current density (J_sc) and (b) conversion efficiency of In_0.6Ga_0.4N p-i-n homojunction solar cells with various p-layer thickness at different surface recombination velocities. 不同表面复合速度下, In_0.6Ga_0.4N p-i-n同质结太阳电池在不同p层厚度下的(a)短路电流密度(J_sc)和(b)转换效率

Fig. 6. (a) I-V curves of In_0.2Ga_0.8N, In_0.4Ga_0.6N and In_0.6Ga_0.4N p-i-n homojunction solar cells with various p-layer thickness and (b) the lateral resistance of p-layer for In_0.6Ga_0.4N p-i-n homojunction solar cells. (a) In_0.2Ga_0.8N, In_0.4Ga_0.6N和In_0.6Ga_0.4N p-i-n同质结电池在不同p层厚度下的I-V曲线; (b)不同p层厚度下In_0.6Ga_0.4N p-i-n同质结电池p层的横向电阻

Table 1. Parameters of baseline for In_xGa_1–xN p-i-n homojunction solar cells.