[1] Sa-Halasz G A, Tsu R, Esaki L. A new semiconductor superlattice[J]. Applied Physics Letters, 1977,30(12): 651-653.

[2] Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in InAs/Ga1－xInxSb superlattices[J]. Applied Physics Letters, 1994,64(23): 3160-3162.

[3] Donetsky D, Svensson S P, Vorobjev L E, et al. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures[J]. Applied Physics Letters, 2009, 95(21): 212104.

[4] Donetsky D, Belenky G, Svensson S , et al. Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials[J]. Applied Physics Letters, 2010,97(5): 052108.

[5] Gossick B R. On the transient behavior of semiconductor rectifiers[J]. Journal of Applied Physics, 1955, 26(11): 1356-1365.

[6] Davies L W. The use of PLN structures in investigations of transient recombination from high injection levels in semiconductors[J]. Proceedings of the IEEE, 1963,51(11): 1637.

[7] Bassett R J. Observations on a method of determining the carrier lifetime in p+－ν-n+ diodes[J]. Solid-state Electronics, 1969, 12(5): 385-391.

[8] Mahan J E, Ekstedt T W, Frank R I, et al. Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decay[J]. IEEE Transactions on Electron Devices, 1979,26(5): 733.

[9] Szmulowicz F, Haugan H J, Elhamri S, et al. Transport studies of MBE-grown InAs/GaSb superlattices[J]. Opto-Electronics Review, 2010,18(3): 267-270.

[10] Hood A, Hoffman D, Wei Y J, et al. Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes[J]. Applied Physics Letters, 2006,88(5): 052112.

[11] Grein C H, Young P M, Flatt M E, et al. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes[J]. Journal of Applied Physics, 1995,78(12): 7143-7152.

[12] Fredrik A. Lindholm, C. Tang Sah. Normal modes of semiconductor p-n junction devices for material parameter determination[J]. Journal of Applied Physics, 1976,47(9): 4203-4205.

[13] Salach-bielecki R, Pisarkiewicz T, Stapiski T, et al. Influence of junction parameters on the open circuit voltage decay in solar cells[J]. Opto-Electronics Review, 2004,12(1): 79-83.

[14] Plis E, Kim H S, Bishop G, et al. Lateral diffusion of minority carriers in nBn based type-Ⅱ InAs/GaSb strained layer superlattice detectors[J]. Applied Physics Letters, 2008,93(12): 123507.

[15] Umana-Membreno G A, Klein B, Kala H, et al. Vertical minority carrier electron transport in p-type InAs/GaSb type-Ⅱ Superlattices[J]. Applied Physics Letters, 2012,101(25): 253515.

[16] Waldmeyer J. A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductors[J]. Journal of Applied Physics, 1988,63(6): 1977-1983.

[17] Kim H S, Plis E, Khoshakhlagh A, et al. Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation[J]. Applied Physics Letters, 2010,96(3): 033502.

[18] Kim H S, Plis E, Gautam N, et al. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation[J]. Applied Physics Letters, 2010,97(14): 143512.

[19] Umana-Membrenoa G A, Kleinb B, Kalaa H, et al. Vertical transport in InAs/GaSb type-Ⅱ strained-layer superlattices for infrared focal plane array applications[J]. Infrared Technology and Applications XXXVII, Proceeding of SPIE, 2011: 80120Y-1.

[21] Pellegrino J, DeWames R. Minority carrier lifetime characteristics in type Ⅱ InAs/GaSb LWIR superlattice n+πp+ photodiodes[J]. Infrared Technology and Applications XXXV, SPIE Proceedings, 2009: 72981U.