• Laser & Optoelectronics Progress
  • Vol. 50, Issue 6, 61601 (2013)
Feng Qing1、2、*, Yue Yuanxia1、2, Wang Yin1、2, and Yang Ying1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.3788/lop50.061601 Cite this Article Set citation alerts
    Feng Qing, Yue Yuanxia, Wang Yin, Yang Ying. Study on Optical and Electronic Properties of Anatase TiO2 with Mn-N Co-Doping[J]. Laser & Optoelectronics Progress, 2013, 50(6): 61601 Copy Citation Text show less

    Abstract

    Recently, improving the visible-light utilization ratio by the metal and non-metallic impurities co-doped TiO2 semiconductor is a research focus. The band structure, density of states, partial density of states and optical properties of Mn-doped, N-doped and Mn-N co-doped anatase TiO2 are studied by plane-wave supersoft pseudopotential method based on the density functional theory. Contrasting Mn, N, Mn-N doped anatase TiO2, the results show that N single doped TiO2 effectively makes the band gap decrease from 3.2 eV to 2.83 eV and a Mn single doping results in three impurity levels in the band gap, which reduces the electron transition energy from the valence band to conduction band. While Mn-N co-doped anatase TiO2 crystals lead the Fermi level to move to the conduction band, simultaneously forming impurity level in the valence band top and reducing the band gap. The electronic transition energy is about 2.1 eV (wavelength is 590 nm) from impurity levels to the conduction band, which exactly corresponds to the absorption peak in the absorption spectrum. This will more effectively improve the utilization of the visible light.
    Feng Qing, Yue Yuanxia, Wang Yin, Yang Ying. Study on Optical and Electronic Properties of Anatase TiO2 with Mn-N Co-Doping[J]. Laser & Optoelectronics Progress, 2013, 50(6): 61601
    Download Citation