• Laser & Optoelectronics Progress
  • Vol. 60, Issue 13, 1323001 (2023)
Tao Liu, Xingxin Cheng, Zigang Zhou*, and Yongjia Yang**
Author Affiliations
  • School of Mathematics and Science, Southwest University of Science and Technology, Mianyang 621010, Sichuan, China
  • show less
    DOI: 10.3788/LOP230572 Cite this Article Set citation alerts
    Tao Liu, Xingxin Cheng, Zigang Zhou, Yongjia Yang. Graphene Ultra-Broadband Perfect Absorber with Slit Structure[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1323001 Copy Citation Text show less
    Structure schematic diagram of the ultra wideband perfect absorber. (a) Three-dimensional overall structure; (b) top view plane; (c) propagation path
    Fig. 1. Structure schematic diagram of the ultra wideband perfect absorber. (a) Three-dimensional overall structure; (b) top view plane; (c) propagation path
    Absorption and reflection curves of the device. (a) Simulated absorption and reflection curves and absorption curves calculated using MRIT theory; (b) absorption curves in TE and TM modes
    Fig. 2. Absorption and reflection curves of the device. (a) Simulated absorption and reflection curves and absorption curves calculated using MRIT theory; (b) absorption curves in TE and TM modes
    Absorption curves for different patterns and their corresponding electric field distribution in the Z-direction. (a) Absorption curves of individual circular; 4 L-shaped and circular + 4 L-shaped graphene; (b) top view of individual circular graphene absorber; (c) top view of 4 L-shaped graphene absorber; (d) top view of circular + L-shaped graphene absorber; (e) electric field distribution in the Z-direction corresponding to different frequency positions
    Fig. 3. Absorption curves for different patterns and their corresponding electric field distribution in the Z-direction. (a) Absorption curves of individual circular; 4 L-shaped and circular + 4 L-shaped graphene; (b) top view of individual circular graphene absorber; (c) top view of 4 L-shaped graphene absorber; (d) top view of circular + L-shaped graphene absorber; (e) electric field distribution in the Z-direction corresponding to different frequency positions
    Distribution of electric field modes at different frequencies. (a) Electric field distribution at the left frequency position (3.02 THz) at 90% device absorption; (b) electric field distribution at 3.32 THz; (c) electric field distribution at 5.02 THz; (d) electric field distribution at 6.76 THz; (e) electric field distribution at 7.16 THz
    Fig. 4. Distribution of electric field modes at different frequencies. (a) Electric field distribution at the left frequency position (3.02 THz) at 90% device absorption; (b) electric field distribution at 3.32 THz; (c) electric field distribution at 5.02 THz; (d) electric field distribution at 6.76 THz; (e) electric field distribution at 7.16 THz
    Absorption curves of the devices and their corresponding top layer patterns when changing the shape of the content graphene. (a) Absorption curves of round, orthorhombic and octagon graphene inside; (b) top layer pattern of round graphene inside; (c) top layer pattern of orthorhombic inside; (d) top layer pattern of octagon inside
    Fig. 5. Absorption curves of the devices and their corresponding top layer patterns when changing the shape of the content graphene. (a) Absorption curves of round, orthorhombic and octagon graphene inside; (b) top layer pattern of round graphene inside; (c) top layer pattern of orthorhombic inside; (d) top layer pattern of octagon inside
    Absorption curve plots for different structural parameters. (a) Plot of absorption curves for different dielectric layer thicknesses d; (b) plot of absorption curves for different radii R of circular graphene; (c) plot of absorption curves for different L-shaped graphene lengths L; (d) plot of absorption curves for different L-shaped graphene widths W
    Fig. 6. Absorption curve plots for different structural parameters. (a) Plot of absorption curves for different dielectric layer thicknesses d; (b) plot of absorption curves for different radii R of circular graphene; (c) plot of absorption curves for different L-shaped graphene lengths L; (d) plot of absorption curves for different L-shaped graphene widths W
    Absorption spectrograms for varying the angle of incidence from 0° to 70°. (a) Absorption spectrogram in TE mode; (b) absorption spectrogram in TM mode
    Fig. 7. Absorption spectrograms for varying the angle of incidence from 0° to 70°. (a) Absorption spectrogram in TE mode; (b) absorption spectrogram in TM mode
    Absorption curves of the absorber at different graphene Fermi energy levels
    Fig. 8. Absorption curves of the absorber at different graphene Fermi energy levels
    ReferenceMaterialNumber of absorber layersFB /THzModulation range /%
    19Graphene32.1716-99
    22Graphene51.1555-99
    42VO2+ Graphene32.155-99
    43Graphene32.0075-99
    44Graphene+Au33.4018-99
    ProposedGraphene34.061-99
    Table 1. Comparison of tunable ultrawideband absorbers
    Tao Liu, Xingxin Cheng, Zigang Zhou, Yongjia Yang. Graphene Ultra-Broadband Perfect Absorber with Slit Structure[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1323001
    Download Citation