• Chinese Journal of Lasers
  • Vol. 30, Issue 8, 755 (2003)
[in Chinese]* and [in Chinese]
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    [in Chinese], [in Chinese]. Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser[J]. Chinese Journal of Lasers, 2003, 30(8): 755 Copy Citation Text show less
    References

    [1] K. Sera, F. O. Kumura, S. Kaneka et al.. Excimer-laser doping into Si thin films [J]. J. Appl. Phys., 1990, 67(5):2359~2363

    [3] Lu Jian, Ni Xiaowu. Physics of Laser Beam Interactions with Materials [M]. Beijing:Machine Industrial Press, 1996. 32~34 (in Chinese)

    [4] M. N. Ozisik. Heat Conduction [M]. Beijing:Higher Education Press, 1983. 316~326 (in Chinese)

    [5] Zeng Jinyan. Quantum Mechanics Ⅰ [M]. 2nd edition. Beijing:Science Press, 1997. 107~108 (in Chinese)

    [6] Liang Kunmiao. Mathematical Physics Method [M]. 2nd edition. Beijing:Higher Education Press, 1978. 233~235 (in Chinese)

    [7] Xue Xingheng. Mathematical Physics Partial Differential Equations [M].Hefei:China Science and Technology University Press, 1995. 117~118 (in Chinese)

    [8] Fu Renwu, Cai Zhihua, Chen Chao. The numerical simulation of continuous Nd:YAG laser-annealing of InP [C]. SPIE, 2000, 4086:199~202

    [in Chinese], [in Chinese]. Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser[J]. Chinese Journal of Lasers, 2003, 30(8): 755
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