Researching | Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser

Journals >Chinese Journal of Lasers >Volume 30 >Issue 8 >Page 755 > Article

Chinese Journal of Lasers
Vol. 30, Issue 8, 755 (2003)

Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser

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[in Chinese], [in Chinese]. Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser[J]. Chinese Journal of Lasers, 2003, 30(8): 755 Copy Citation Text

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Abstract

Based on the experiment, the process of doping of Zn into InP induced by pulsed laser was analysed, and the temperature distribution analytical expression across the finite double layer Zn/InP irradiated by pulsed laser is presented.

Keywords

doping induced by laser pulsed laser temperature distribution Zn/InP laser physics Zn/InP

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[in Chinese], [in Chinese]. Analytical Calculation of Temperature Distribution in the Process of Doping of Zn into InP Induced by Pulsed Laser[J]. Chinese Journal of Lasers, 2003, 30(8): 755

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