GaSb thermophotovoltaic cells were epitaxially grown on GaSb substrates by the Molecular Beam Epitaxy (MBE) method. And two kinds of GaSb TPV cells with 1 cm×1 cm dimensions that had different electrode shape were fabricated. In order to obtain high quality GaSb epitaxial layer, the growth conditions of MBE were optimized continuously. The quality of epilayers was good which was shown in the surface morphology characterized by AFM. The root mean square (RMS) of surface morphology was only 1.5 Å （1 Å=0.1 nm）. Device characteristics including open-circuit voltage, short-circuit current density, external quantum efficiencies, fill factor and dark current density of the TPV cells were measured and compared. Under solar simulation, the TPV cells exhibited an open-circuit voltage of 0.303 V and a short-circuit current density of 27.1 mA/cm². Compared with the TPV cell that had a simple electrode, the TPV cell having the grating electrode showed better performance in short circuit current density and fill factor. Under infrared light illumination, the TPV cell with a grating electrode exhibited an optimal fill factor of 56.8%.