[1] G. K. Celler, Sorin Cristoloveanu. Frontiers of silicon-on-insulator [J]. J. Appl. Phys., 2003, 93(9):4955～4978

[2] F. Gamiz, J. B. Roldan, J. A. Lopez-Villanueva et al.. Electron transport in silicon-on-insulator devices [J]. Solid-State Electronics, 2001, 45:613～620

[3] Andreas Othonos. Prboing ultrafast carrier and phonon dynamics in semiconductors [J]. J. Appl. Phys., 1998, 83(4):1789～1830

[4] A. D. McConnell, K. E. Goodson. Thermal conduction in silicon micro-and nanostructures [J]. Annual Review of Heat Transfer, 2005, 14:129～168

[5] Jagdeep Shah. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures [M]. Berlin: Springer. 1998

[6] Liu Guodong, Wang Guibing, Fu Bo et al.. Ultrafast pump-probe reflectivity study of carrier dynamics in silicon surface [J]. Chinese J. Lasers, 2008, 35(9):1365～1369

[7] Edward D. Palik. Handbook of Optical Constants of Solids [M]. London: Academic Press Inc. LTD., 1985

[8] Andreas Othonos, Constantinos Christofides. Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing [J]. Phys. Rev. B, 2002, 66(085206):1～10

[9] Takayuki Tanaka, Akira Harata, Tsuguo Sawada. Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements [J]. J. Appl. Phys., 1997, 82(8):4033～4038

[10] A. J. Sabbah, D. M. Riffe. Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared [J]. J. Appl. Phys., 2000, 88(11):6954～6956