• Chinese Journal of Quantum Electronics
  • Vol. 26, Issue 4, 482 (2009)
Min LI and Xian-wu MI
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    LI Min, MI Xian-wu. Dynamical process and optical absorption spectra of semiconductor superlattice under terahertz field[J]. Chinese Journal of Quantum Electronics, 2009, 26(4): 482 Copy Citation Text show less
    References

    [1] Cusack M A, Briddon P R, Jaros M. Electronic structure of InAs/GaAs self-assembled quantum dots [J]. Phys. Rev. B, 1996, 54(4): R2300-R2303.

    [2] Adenilson J, et al. Controlling the optical properties of disordered GaAs/AlxGa1-x As superlattices [J]. Phys. Rev. B, 2004, 69(11): 113310-1-4.

    [3] Mi X W, Cao J C. Terahertz-induced changes of optical spectra in GaAs quantum wells [J]. Chin. Phys. Lett., 2004, 21(12): 1157-1160.

    [5] Wannier G H. Wave function and effective Hamiltonian for Bloch electron in an electric field [J]. Phys. Rev., 1960, 117 (2): 432-439.

    [6] Sudzius M, Lyssenko V G, Loser F, et al. Optical control of Bloch-oscillation amplitudes: from harmonic spatial motion to breathing modes [J]. Phys. Rev. B, 1998, 57 (20): R12693-R12696.

    [8] Zhang Aizhen, Yang Lijun, Dignam M M. Influence of excitonic effects on dynamic localization in semiconductor superlattices in combined dc and ac electric fields [J]. Phys. Rev. B, 2003, 67(20): 205318-1-8.

    [9] Danielson J R, et al. Interaction of strong single-cycle terahertz pulses with semiconductor quantum wells [J]. Phys. Rev. Lett., 2007, 99(23): 237401-1-4.

    [10] Kaindl R A, et al. Ultrafast trahertz probes of transient conducting and insulating phases in an electron-hole gas [J]. Nature, 2003, 423(12): 734-738.

    [11] K hler R, et al. Terahertz semiconductor heterostructurelaser [J]. Nature, 2002, 417(9): 156-159.

    [12] Hyart T, Alekseev K, et al. Bloch gain in dc-ac-driven superlattices in the absence of electric domains [J]. Phys. Rev. B, 2008, 77(16): 165330-1-13.

    [14] Dignam M M, Sipe J E. Excition states in type-I and type-II GaAs/Ga1-xAlxAs superlattices [J]. Phys. Rev. B, 1991, 41(5): 2865-2878.

    [15] Dignam M M, Sipe J E. Exciton Stark ladder in semiconductor superlattices [J]. Phys. Rev. B , 1991, 43(5): 4097-4112.

    [16] Maslov A V, Citrin D S. Optical absorption and sideband generation in quantum wells driven by a terahertz electric field [J]. Phys. Rev. B, 2000, 62(24): 16686-16691.

    [17] Dignam M M, Sipe J E. Excition Stark ladder in GaAs superlattice [J]. Phys. Rev. Lett., 1991, 64(15): 1797-1800.

    [18] Mi Xianwu. Optical absorption spectra and intraband dynamics in terahertz-driven semiconductor superlattice [J]. Chin. Phys. Lett., 2004, 21(12): 2536-2539.

    [19] Dignam M M. Excitonic Bloch oscillations in a terahertz field [J]. Phys. Rev. B, 1999, 59(8): 5770-1-14.

    [20] Lachaine J M, Hawton M, Sipe J E, et al. Asymmetry in the excitonic wannier-stark ladder: a mechanism for the stimulated emission of terahertz radiation [J]. Phys. Rev. B, 2000, 62(8): R4829-R4832.

    LI Min, MI Xian-wu. Dynamical process and optical absorption spectra of semiconductor superlattice under terahertz field[J]. Chinese Journal of Quantum Electronics, 2009, 26(4): 482
    Download Citation