Zhengqiong Dong, Shun Yuan, Chenyang Li, Shaokang Tang, Lei Nie. Three-Dimensional Morphology Parameters Measurement of T-Type Phase Change Random Access Memory Based on Optical Scatterometry[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1929001
- Laser & Optoelectronics Progress
- Vol. 59, Issue 19, 1929001 (2022)
Fig. 1. Extraction process of sample parameters to be measured based on LM algorithm
Fig. 2. Basic principle and physical map of the ellipsometer. (a) Basic principle; (b) physical map
Fig. 3. Structure of the PCRAM chip. (a) Block diagram of each module; (b) schematic diagram of T-type PCRAM unit array
Fig. 4. Structure of the TiW bottom electrode. (a) Schematic diagram of the morphology; (b) test results of the SEM
Fig. 5. Measured and optimal theoretical Stokes parameters of the TiW bottom electrode
Fig. 6. Structure of the first layer of GST holes. (a) Schematic diagram of the morphology; (b) test results of the SEM
Fig. 7. Measured and optimal theoretical Stokes parameters of the first layer GST pore structure
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Table 1. Nominal values of parameters to be extracted
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Table 2. Measurement results of structural parameters based on optical scattermeter and SEM
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