• Infrared and Laser Engineering
  • Vol. 45, Issue 5, 520005 (2016)
Li Huimei*, Hu Xiaobin, Bai Lin, Li Xiaomin, Yu Hailong, Xu Yun, and Song Guofeng
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201645.0520005 Cite this Article
    Li Huimei, Hu Xiaobin, Bai Lin, Li Xiaomin, Yu Hailong, Xu Yun, Song Guofeng. Numerical simulation study on In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode[J]. Infrared and Laser Engineering, 2016, 45(5): 520005 Copy Citation Text show less
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    [2] Shi Zhu, He Wei, Qin Wenzhi, et al. Quadrant PIN photo-detector integrated APD in the center on the basis of InGaAs heterostructure[J]. Infrared and Laser Engineering, 2010, 39(5): 824-829. (in Chinese)

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    [4] Mohammad A Saleh, Majeed M Hayat, Paul P Sotirelis, et al. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes[J]. IEEE Trans Electron Devices, 2001, 48(12): 2722-2731.

    [5] Yuan P, Hansing C C, Anselm K A, et al. Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thickness[J]. IEEE J Quantum Electron, 2000, 36: 198-204.

    [6] Dwivedi A D D, Mittal A, Agrawal A, et al. Analytical modeling and ATLAS simulation of N+-InP/n0- In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication[J]. Infrared Physics & Technology, 2010, 53: 236-245.

    [7] Sotoodeh M, Khalid A H, Rezazadeh A A. Empirical low-field mobility model for III-V compounds applicable in device simulation codes[J]. J Appl Phys, 2000, 87(6): 2890-2900.

    [8] Campbell J C, Tsang W T, Qua G J, et al. High-speed InP/InGaAsP/InGaAs Avalanche Photodiodes Grown by Chemical Beam Epitaxy[J]. IEEE J Quantum Electron,1988, 24(3): 496-500.

    [9] Joe C Campbell. Recent advances in telecommunications avalanche photodiodes[J]. J Lightwave Technol, 2007, 25(1): 109-121.

    [10] McIntyre R J. Mulyiplication noise in uniform avalanche diodes[J]. IEEE Transactions on Electron Devices, 1966, 13(1): 164-168.

    [11] Eiji Yagyu, Eitaro Ishimura, Masaharu Nakaji, et al. Design and characteristics of guardring-free planar InAlAs avalanche photodiodes[J]. Journal of Lightwave Technology, 2009, 27(8): 1011-1017.

    Li Huimei, Hu Xiaobin, Bai Lin, Li Xiaomin, Yu Hailong, Xu Yun, Song Guofeng. Numerical simulation study on In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode[J]. Infrared and Laser Engineering, 2016, 45(5): 520005
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