[1] Nakmura S.Mukai T,Senoh M.Candela-class high-brightness InGaN/A1GaN double-heterostructure blue-lightemitting diodes[J].Appl.Phys.Lett.,1994,64(13):1687～1689

[2] Schnizer I ,Yablonovitch E.30% external quantum efficiency from surface textured,thin-film light-emitting diodes[J].Appl.Phys.Lett.,1993,63(16):2174～2176

[3] Huang K H,Yu J G,Kuo C P et al.Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555～620 nm spectral region using a thick GaP window layer[J].Appl.Phys.Lett.,1992,61(9):1045～1047

[5] Kish F A,Sterranka F M,Defevere D C et al.Very high-efficiency semiconductor wafer-bonded transparentsubstrate (AlxGa1-x)0.5In0.5P/GaP light-emit ting diodes [J].Appl.Phys.Lett.,1994,4(21):2839～2841