[1] Prati E and Shinada T 2013 Single-Atom Nanoelectronics (Singapore: Pan Stanford)
[2] Müller M, Fiedler T, Gr?ger R, Koch T, Walheim S, Obermair C and Schimmel T 2004 Controlled structuring of mica surfaces with the tip of an atomic force microscope by mechanically induced local etching Surf. Interface Anal. 36 189–92
[3] Liu M Z, Amro N A and Liu G Y 2008 Nanografting for surface physical chemistry Annu. Rev. Phys. Chem. 59 367–86
[4] Mamin H J and Rugar D 1992 Thermomechanical writing with an atomic force microscope tip Appl. Phys. Lett. 61 1003–5
[5] Fenwick O, Bozec L, Credgington D, Hammiche A, Lazzerini G M, Silberberg Y R and Cacialli F 2009 Thermochemical nanopatterning of organic semiconductors Nat. Nanotechnol. 4 664–8
[6] Torrey J D, Vasko S E, Kapetanovic A, Zhu Z H, Scholl A and Rolandi M 2010 Scanning probe direct-write of germanium nanostructures Adv. Mater. 22 4639–42
[7] Jegadesan S, Sindhu S and Valiyaveettil S 2006 Easy writing of nanopatterns on a polymer film using electrostatic nanolithography Small 2 481–4
[8] Marrian C R K, Dobisz E A and Dagata J A 1992 Electron-beam lithography with the scanning tunneling microscope J. Vac. Sci. Technol. B 10 2877–81
[9] Park J, Park J Y, Choi T and Seo Y 2011 Graphite patterning in a controlled gas environment Nanotechnology 22 335304
[10] Rangelow I W, Ivanov T, Sarov Y, Schuh A, Frank A, Hartmann H, Z?llner J P, Olynick D L and Kalchenko V 2010 Nanoprobe maskless lithography. Proc. SPIE 7637 76370V
[11] Anderson E H, Olynick D L, Chao W L, Harteneck B and Veklerov E 2001 Influence of sub-100 nm scattering on high-energy electron beam lithography J. Vac. Sci. Technol. B 19 2504–7
[12] Marrian C R K and Tennant D M 2003 Nanofabrication J. Vac. Sci. Technol. A 21 S207–15
[13] Cord B, Yang J, Duan H G, Joy D C, Klingfus J and Berggren K K 2009 Limiting factors in sub-10 nm scanning-electron-beam lithography J. Vac. Sci. Technol. B 27 2616–21
[14] Grigorescu A E and Hagen C W 2009 Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art Nanotechnology 20 292001
[15] Walz M M, Vollnhals F, Rietzler F, Schirmer M, Steinruck H P and Marbach H 2012 Investigation of proximity effects in electron microscopy and lithography Appl. Phys. Lett. 100 053118
[16] Manfrinato V R, Zhang L H, Su D, Duan H G, Hobbs R G, Stach E A and Berggren K K 2013 Resolution limits of electron-beam lithography toward the atomic scale Nano Lett. 13 1555–8
[17] Manfrinato V R et al 2014 Determining the resolution limits of electron-beam lithography: direct measurement of the point-spread function Nano Lett. 14 4406–12
[18] Manfrinato V R, Cheong L L, Duan H G, Winston D, Smith H I and Berggren K K 2011 Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist Microelectron. Eng. 88 3070–4
[19] Greeneich J S 1980 Electron-beam processes Electron-Beam Technology in Microelectronic Fabrication ed G R Brewer (New York: Academic) pp 59–140
[20] Joy D C 1983 The spatial resolution limit of electron lithography Microelectron. Eng. 1 103–19
[21] Schock K D, Prins F E, Str¨ahle S and Kern D P 1997 Resist processes for low-energy electron-beam lithography J. Vac. Sci. Technol. B 15 2323–6
[22] Wu B and Neureuther A R 2001 Energy deposition and transfer in electron-beam lithography J. Vac. Sci. Technol. B 19 2508–11
[23] Joy D C 1995 A database on electron-solid interactions Scanning 17 270–5
[24] De Vera P, Abril I and Garcia-Molina R 2011 Inelastic scattering of electron and light ion beams in organic polymers J. Appl. Phys. 109 094901
[25] Tilke A, Vogel M, Simmel F, Kriele A, Blick R H, Lorenz H, Wharam D A and Kotthaus J P 1999 Low-energy electron-beam lithography using calixarene J. Vac. Sci. Technol. B 17 1594–7
[26] Shirota Y 2005 Photo- and electroactive amorphous molecular materials - molecular design, syntheses, reactions, properties, and applications J. Mater. Chem. 15 75–93
[27] Dai J Y, Chang S W, Hamad A, Yang D, Felix N and Ober C K 2006 Molecular glass resists for high-resolution patterning Chem. Mater. 18 3404–11
[28] Fujita J, Ohnishi Y, Ochiai Y, Nomura E and Matsui S 1996 Nanometer-scale resolution of calixarene negative resist in electron beam lithography J. Vac. Sci. Technol. B 14 4272–6
[29] Ishida M, J I F, Ogura T, Ochiai Y, Ohshima E and Momoda J 2003 Sub-10-nm-scale lithography using p-chloromethyl-methoxy-calix[4]arene resist Jpn. J. Appl. Phys. 42 3913–6
[30] Solak H H, Ekinci Y, Kaser P and Park S 2007 Photon-beam lithography reaches 12.5 nm half-pitch resolution J. Vac. Sci. Technol. B 25 91–95
[31] Ohnishi Y, Fujita J, Ochiai Y and S M 1997 Calixarenesprospective materials for nanofabrication Microelectron. Eng. 35 117–20
[32] Charlesby A 1960 Atomic Radiation and Polymers (Oxford: Pergamon)
[33] Perkins F K, Dobisz E A and Marrian C R K 1993 Determination of acid diffusion rate in a chemically amplified resist with scanning tunneling microscope lithography J. Vac. Sci. Technol. B 11 2597–602
[34] Wilder K, Quate C F, Adderton D, Bernstein R and Elings V 1998 Noncontact nanolithography using the atomic force microscope Appl. Phys. Lett. 73 2527–9
[35] Wilder K, Quate C F, Singh B and Kyser D F 1998 Electron beam and scanning probe lithography: a comparison J. Vac. Sci. Technol. B 16 3864–73
[36] Ruderisch A 2003 Synthese Von Calixaren- Und Resorcinarenderivaten Und Deren Anwendung in Chromatographie Und Nanotechnologie (Tübingen: Eberhard-Karls-Universit¨at Tübingen)
[37] Sailer H 2007 Evaluierung Hochaufl?sender, Nicht Polymerer Elektronenstrahllacke Auf Calixaren–Basis (Tübingen: Universitaet Tübingen)
[38] Prins F E, Pfeiffer J, Raible S, Kern D P and Schurig V 1998 Systematic studies of functionalized calixarenes as negative tone electron beam Microelectron. Eng. 41–2 359–62
[39] De Oteyza D G, Perera P N, Schmidt M, Falch M, Dhuey S D, Harteneck B D, Schwartzberg A M, Schuck P J, Cabrini S and Olynick D L 2012 Sub-20 nm laser ablation for lithographic dry development Nanotechnology 23 185301
[40] Perera P N, Schwartzberg A M, De Oteyza D G, Dhuey S D, Harteneck B D, Cabrini S and Olynick D L 2012 Selective laser ablation of radiation exposed methyl acetoxy calix(6)arene J. Vac. Sci. Technol. B 30 06FI02
[41] Vorbringer-Doroshovets N et al 2013 0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography Proc. SPIE 8680 868018
[42] Kaestner M et al 2014 Scanning probes in nanostructure fabrication J. Vac. Sci. Technol. B 32 06F101
[43] Heidenreich R D, Thompson L F, Feit E D and Melliar-Smith C M 1973 Fundamental aspects of electron beam lithography. I. Depth-dose response of polymeric electron beam resists J. Appl. Phys. 44 4039–47
[44] Thompson L F, Feit E D, Melliar-Smith C M and Heidenreich R D 1973 Fundamental aspects of electron beam lithography. II. Low-voltage exposure of negative resists J. Appl. Phys. 44 4048–51
[45] Vriens L 1966 Binary-encounter electron-atom collision theory Phys. Rev. 141 88–92
[46] Vriens L 1966 Electron exchange in binary encounter collision theory Proc. Phys. Soc. 89 13–21
[47] Kanik I, Trajmar S and Nickel J C 1992 Total cross section measurements for electron scattering on CH4 from 4 to 300 eV Chem. Phys. Lett. 193 281–6
[48] Giordan J C, Moore J H and Tossell J A 1986 Anion states of organometallic molecules and their ligands Acc. Chem. Res. 19 281–6
[49] Kim Y K et al Electron-impact cross sections for ionization and excitation database (http://www.nist.gov/pml/data/ ionization/index.cfm)
[50] Tanuma S, Powell C J and Penn D R 1990 Electron inelastic mean free paths in solids at low energies J. Electron. Spectrosc. Relat. Phenom. 52 285–91
[51] Tanuma S, Powell C J and Penn D R 1992 Inelastic mean free paths of low-energy electrons in solids Acta Phys. Pol. A 81 169–86
[52] Michaud M, Wen A and Sanche L 2003 Cross sections for low-energy (1-100 eV) electron elastic and inelastic scattering in amorphous ice Radiat. Res. 159 3–22
[53] Ma?ín Z, Gorfinkiel J D, Jones D B, Bellm S M and Brunger M J 2012 Elastic and inelastic cross sections for low-energy electron collisions with pyrimidine J. Chem. Phys. 136 144310
[54] Chang T H P, Kern D P and Muray L P 1992 Arrayed miniature electron beam columns for high throughput sub-100 Nm lithography J. Vac. Sci. Technol. B 10 2743–8
[55] Silver C S, Spallas J P and Muray L P 2007 Multiple beam sub-80-nm lithography with miniature electron beam column arrays J. Vac. Sci. Technol. B 25 2258–65
[56] Hordon L S, Huang Z R, Maluf N, Browning R and Pease R F W 1993 Limits of low-energy electron optics J. Vac. Sci. Technol. B 11 2299–303
[57] Rangelow I W 2006 Scanning proximity probes for nanoscience and nanofabrication Microelectron. Eng. 83 1449–55
[58] Rangelow I W, Ivanov T, Ahmad A, Kaestner M, Lenk C, Bozchalooi I S, Xia F Z, Youcef-Toumi K, Holz M and Reum A 2017 Review article: active scanning probes: a versatile toolkit for fast imaging and emerging nanofabrication J. Vac. Sci. Technol. B 35 06G101
[59] Kaestner M et al 2015 Advanced electric-field scanning probe lithography on molecular resist using active cantilever J. Micro/Nanolith. MEMS MOEMS 14 031202
[60] Fowler R H and Nordheim L 1928 Electron emission in intense electric fields Proc. R. Soc. A 119 173–81
[61] Young R, Ward J and Scire F 1972 The topografiner: an instrument for measuring surface microtopography Rev. Sci. Instrum. 43 999–1011
[62] Kragler K 1997 Rastersondenlithographie Mit Niederenergetischen Elektronen (Nürnberg: Friedrich-Alexander-Universit¨at Erlangen-Nürnberg)
[63] Olynick D L et al 2015 Selective laser ablation in resists and block copolymers for high resolution lithographic patterning J. Photopolym. Sci. Technol. 28 663–8
[64] Angelov T et al 2016 Six-axis AFM in SEM with self-sensing and self-transduced cantilever for high speed analysis and nanolithography J. Vac. Sci. Technol. B 34 06KB01
[65] Wilson H A 1923 The motion of electrons in gases Proc. R. Soc. A 103 53–57
[66] Kapzow N A 1955 Elektrische Vorg¨ange in Gasen Und Im Vakuum (Berlin: VEB Deutscher Verlag der Wissenschaften)
[67] Seah M P and Dench W A 1979 Quantitative electron spectroscopy of surfaces: a standard data base for electron inelastic mean free paths in solids Surf. Interface Anal. 1 2–11
[68] Torok J et al 2013 Secondary electrons in EUV lithography J. Photopolym. Sci. Technol. 26 625–34
[69] Denbeaux G et al 2013 Measurement of the role of secondary electrons in EUV resist exposures Proc. Int. Workshop on EUV Lithography (https://www.euvlitho.com/2013/ P29.PDF)
[70] Marrian C R K, Dobisz E A and Colton R J 1990 Lithographic studies of an e-beam resist in a vacuum scanning tunneling microscope J. Vac. Sci. Technol. A 8 3563–9
[71] Marrian C R K and Colton R J 1990 Low-voltage electron beam lithography with a scanning tunneling microscope Appl. Phys. Lett. 56 755–7
[72] Dobisz E A, Marrian C R K and Colton R J 1990 Lithography with a 50 KV e beam and a vacuum scanning tunneling microscope in a polydiacetylene negative resist J. Vac. Sci. Technol. B 8 1754–8
[73] Zhang L B, Shi J X, Yuan J L, Chang M and Wang X H 2003 The overview of scanning probe lithography by electron beam exposure of organic resists Proc. 2003 3rd IEEE Conf. on Nanotechnology (San Francisco, CA: IEEE) pp 797–800
[74] Lyuksyutov S F, Paramonov P B, Sharipov R A and Sigalov G 2004 Induced nanoscale deformations in polymers using atomic force microscopy Phys. Rev. B 70 174110
[75] Ohto M, Yamaguchi S and Tanaka K 1995 Migration of metals on graphite in scanning tunneling microscopy Japan. J. Appl. Phys. 34 L694–7
[76] Leuschner R, Günther E, Falk G, Hammerschmidt A, Kragler K, Rangelow I W and Zimmermann J 1996 Bilayer resist process for exposure with low-voltage electrons (STM-lithography) Microelectron. Eng 30 447–50
[77] Lenk C et al 2018 Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode J. Vac. Sci. Technol. B 36 06JL03
[78] Kondo S, Heike S, Lutwyche M and Wada Y 1995 Surface modification mechanism of materials with scanning tunneling microscope J. Appl. Phys. 78 155–60
[79] Kaestner M and Rangelow I W 2011 Scanning proximal probe lithography for sub-10 nm resolution on calix[4]resorcinarene J. Vac. Sci. Technol. B 29 06FD02
[80] Krivoshapkina Y, Kaestner M, Lenk C, Lenk S and Rangelow I W 2017 Low-energy electron exposure of ultrathin polymer films with scanning probe lithography Microelectron. Eng. 177 78–86
[81] Lyuksyutov S F, Vaia R A, Paramonov P B, Juhl S, Waterhouse L, Ralich R M, Sigalov G and Sancaktar E 2003 Electrostatic nanolithography in polymers using atomic force microscopy Nat. Mater. 2 468–72
[82] Rangelow I W et al 2018 Atomic force microscope integrated with a scanning electron microscope for correlative nanofabrication and microscopy J. Vac. Sci. Technol. B 36 06J102
[83] Holz M, Reuter C, Reum A, Ahmad A, Hofmann M, Ivanov T, Mechold S and Rangelow I W 2019 Atomic force microscope integrated into a scanning electron microscope for fabrication and metrology at the nanometer scale Proc. SPIE 11148 111481F
[84] Holz M, Reuter C, Ahmad A, Reum A, Hofmann M, Ivanov T and Rangelow I W 2019 Correlative microscopy and nanofabrication with AFM integrated with SEM Microsc. Today 27 24–30
[85] Holz M, F I A, Reuter C, Ahmad A, Hofmann M, Reum A, Ivanov T and Rangelow I W 2019 Tip-based electron beam induced deposition using active cantilevers J. Vac. Sci. Technol. B 37 061812
[86] Rangelow I W et al 2016 Pattern-generation and pattern-transfer for single-digit Nano devices J. Vac. Sci. Technol. B 34 06K202
[87] Durrani Z, Jones M, Abualnaja F, Wang C, Kaestner M, Lenk S, Lenk C, Rangelow I W and Andreev A 2018 Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography J. Appl. Phys. 124 144502
[88] Kaestner M, Hofer M and I W R 2013 Nanolithography by scanning probes on calixarene molecular glass resist using mix-and-match lithography J. Micro/Nanolith. MEMS MOEMS 12 031111
[89] Kaestner M and I W R 2012 Multi-step scanning probe lithography (SPL) on calixarene with overlay alignment Proc. SPIE 8323 83231G
[90] Tennant D M 1999 Limits of conventional lithography Nanotechnology ed G Timp (Berlin: Springer) pp 161–205
[91] Lenk C et al 2019 High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology J. Vac. Sci. Technol. B 37 021603
[92] Rangelow I W et al 2017 Single Nano-digit and closed-loop scanning probe lithography for manufacturing of electronic and optical nanodevices Proc. SPIE 10456 1045621
[93] Rangelow I W et al 2018 Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions Proc. SPIE 10584 1058406
[94] Holz M et al 2018 Field-emission scanning probe lithography tool for 150 mm Wafer J. Vac. Sci. Technol. B 36 06JL06