Physical jet deposition (PJD) method was used to form the C 60Ni films, one of the transition metal fullerides films, which were made into the Al/C 60Ni/ITO(indium tin oxide) layered structure photovoltaic cells. The photovoltaic effect and the forward and backward current-voltage characteristic of the cells were investigated and compared with the Al/C 60/ITO films. The enhancement of photovoltaic effect and rectification of Al/C 60Ni interface was observed. It indicates the buildup of interface electrical dipolar field on the Al/C 60Ni interface, which was caused by the charge transfer from Ni atoms to C 60 molecules in the samples.