Single-crystalline Bi2Se3 and Bi2(TexSe1-x)3 nanowires were synthesized via Au catalytic vapor-liquid-solid (VLS) growth method. Electronic properties of the surface states in individual Bi2(TexSe1-x)3 (x=0.26) nanowire were studied by low-temperature magnetotransport measurement. Weak antilocalization (WAL) effect was found, suggesting strong spin-orbit coupling in our samples. It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping. By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures, the extracted dephasing length lφ decreases from 389 nm at 1.5 K to 39 nm at 20 K, which can be well described by the power law lφ∝T-0.96. It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.