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    Journals >Infrared and Laser Engineering >Volume 49 >Issue 12 >Page 20201054 > Article
    • Infrared and Laser Engineering
    • Vol. 49, Issue 12, 20201054 (2020)
    Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser （Invited）
    Xiang Li1, Hong Wang2, Zhongliang Qiao3, Yu Zhang4, Zhichuan Niu4, Cunzhu Tong5, and Chongyang Liu1
    Author Affiliations
  • 1Temasek Laboratories, Nanyang Technological University, Singapore 637553, Singapore
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 3School of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
  • 4State Key Lab for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5State Key Lab of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    DOI: 10.3788/IRLA20201054 Cite this Article
    Xiang Li, Hong Wang, Zhongliang Qiao, Yu Zhang, Zhichuan Niu, Cunzhu Tong, Chongyang Liu. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser （Invited）[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054 Copy Citation Text show less
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    Xiang Li, Hong Wang, Zhongliang Qiao, Yu Zhang, Zhichuan Niu, Cunzhu Tong, Chongyang Liu. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser （Invited）[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054
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