• Journal of Infrared and Millimeter Waves
  • Vol. 33, Issue 4, 386 (2014)
LIU Fu-Hao1、2、*, XU Jin-Tong1、3, LIU Fei1、2, WANG Li-Wei1、2, ZHANG Yan1、3, and LI Xiang-Yang1、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3724/sp.j.1010.2014.00386 Cite this Article
    LIU Fu-Hao, XU Jin-Tong, LIU Fei, WANG Li-Wei, ZHANG Yan, LI Xiang-Yang. Negative photoresponsse of AlGaN-based p-i-n photodetector[J]. Journal of Infrared and Millimeter Waves, 2014, 33(4): 386 Copy Citation Text show less
    References

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    [3] Pearton S J, Zolper J C, Shul R J, et al. GaN: processing, defects, and devices[J]. J. Appl. Phys. 1999,86(1): 178.

    [4] Munoz E, Monroy E, Calle F, et al. AlGaN-based photodetectors for solar UV applications[J]Proc. SPIE, 1999,3629: 200210.

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    [8] Collins C J, Chowdhury U, Wong M M, et al. Improved solar-blind detectivity using an AlxGa1-xN heterojunction p -i -n photodiode[J]. Appl. Phys. Lett. 2002,80(20): 3754-3756.

    [10] Sze S M. Physics of semiconductor devices[M]Wiley, New York, 1981.

    [11] Xu J T, You D, Tang Y W, et al. Electric-field effects on persistent photoconductivity in undoped n-type epitaxial GaN[J]. Appl. Phys. Lett. 2006,88: 072106.

    [12] Cai S, Parish G, Dell J M, et al. Contribution of hole trap to persistent photoconductivity in n-type GaN[J]. J. Appl. Phys. 2004,96(2): 1019.

    LIU Fu-Hao, XU Jin-Tong, LIU Fei, WANG Li-Wei, ZHANG Yan, LI Xiang-Yang. Negative photoresponsse of AlGaN-based p-i-n photodetector[J]. Journal of Infrared and Millimeter Waves, 2014, 33(4): 386
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