Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties

Liu Yaogang; Xu Bin; Han Jianru; Liu Xiangyang; Jiang Minhua

Journals >Chinese Journal of Lasers >Volume 13 >Issue 7 >Page 438 > Article

Chinese Journal of Lasers
Vol. 13, Issue 7, 438 (1986)

Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties

Liu Yaogang, Xu Bin, Han Jianru, Liu Xiangyang, and Jiang Minhua

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[in Chinese]

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Liu Yaogang, Xu Bin, Han Jianru, Liu Xiangyang, Jiang Minhua. Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties[J]. Chinese Journal of Lasers, 1986, 13(7): 438 Copy Citation Text

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Abstract

The process of flux growth of KTiOPO4(KTP) crystals is briefly described. The larfgest crystal grown is 42.5×42.0× 13.6mm. With the devices made by KTP crystals in the Nd:YAG mode-locked laser, frequency-doubling conversion efficiency of the extracavity device obtained is 65.1%; while in quasie-CW Nd:YAG laser, the average green light output obtained is 8.7W.

Liu Yaogang, Xu Bin, Han Jianru, Liu Xiangyang, Jiang Minhua. Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties[J]. Chinese Journal of Lasers, 1986, 13(7): 438

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