Temperature effect on Ⅰ-Ⅴ characteristics of the HgCdTe diodes

[in Chinese]; [in Chinese]; [in Chinese]

[1] GOPAL V,SINGH S K,MEHRA R M.Analysis of dark current contributions in mercury cadmium telluride junction diodes[J].Infrared Phys & Tech,2002,43:317-326.

[2] GOPAL V,GUPTA S,BHAN R K,et,al.Modeling of dark characteristics of mercury cadmium telluride n+-p junctions[J].Infrared Phys& Technol,2003,44:143-152.

[3] HANSEN G L,SCHMIT J L.Calculate of intrinsic carrier concentration in Hg1-xCdxTe[J].J Appl Phys,1983,54(3):1639-1640.

[4] HANSEN G L,SCHMIT J L,CASSELMAN T N.Energy gap versus alloy composition and temperature in Hg1-xCdxTe[J].J Appl Phys,1982,53(10):7099-7101.

[5] GOPAL V,GUPTA S,BHAN R K,et al.Modeling of dark characteristics of mercury cadmium telluride n+-p junctions[J].Infrared Physics & Technology,2003,44:143-152.

[6] GOGALSKI A.Analysis of the R0A product in n+-p Hg1-xCdxTe photodiodes[J].Infrared Phys,1988,28(3):139-153.

[7] NATHAN V.Optical absorption in Hg1-xCdxTe[J].J Appl Phys,1998,83(5):2812-2814.

[8] BECK J D,KINCH M A,ESPOSITO E J,et,al.The MIS physics of the native oxide Hg1-xCdxTe interface[J].J Vac Sci Technol,1982,21(1):172-177.

[9] ROSENFELD D,BAHIR G.A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n +-p HgCdTe photodiodes[J].IEEE Trans Electron Devices,1992,39(7):1638-1645.

[10] NEMIROVSKY Y,BLOOM I.Tunneling currents in reverse biased Hg1-xCdx Te photodiodes[J].Infrared Phys,1987,27(3):143-151.